JANSR2N7433 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	JANSR2N7433
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Avalanche Energy Rating (EAS): 500 mJ; JESD-30 Code: S-CSFM-P3;
Datasheet	JANSR2N7433 Datasheet
In Stock	1,274

NAME	DESCRIPTION
Package Body Material:	CERAMIC, METAL-SEALED COFIRED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	250 ns
Maximum Drain Current (ID):	35 A
Maximum Pulsed Drain Current (IDM):	140 A
Surface Mount:	NO
Terminal Finish:	TIN LEAD
No. of Terminals:	3
Maximum Power Dissipation (Abs):	250 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
Maximum Turn Off Time (toff):	330 ns
JESD-30 Code:	S-CSFM-P3
No. of Elements:	1
Package Shape:	SQUARE
Terminal Form:	PIN/PEG
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.077 ohm
Avalanche Energy Rating (EAS):	500 mJ
Maximum Feedback Capacitance (Crss):	360 pF
JEDEC-95 Code:	TO-254AA
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e0
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	200 V
Qualification:	Qualified
Reference Standard:	MIL-19500/663

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,274	-	-

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