Infineon Technologies - JANSR2N7503U8C

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JANSR2N7503U8C by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number JANSR2N7503U8C
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 24 mJ; Maximum Drain Current (ID): 6.9 A; Reference Standard: MIL-19500/743;
Datasheet JANSR2N7503U8C Datasheet
In Stock1,487
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 6.9 A
Maximum Pulsed Drain Current (IDM): 27.6 A
Surface Mount: YES
No. of Terminals: 3
Terminal Position: BOTTOM
Package Style (Meter): CHIP CARRIER
JESD-30 Code: R-CBCC-N3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .22 ohm
Avalanche Energy Rating (EAS): 24 mJ
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 100 V
Qualification: Qualified
Reference Standard: MIL-19500/743
Peak Reflow Temperature (C): NOT SPECIFIED
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