Infineon Technologies - JANSR2N7524U2A

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JANSR2N7524U2A by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number JANSR2N7524U2A
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; JESD-30 Code: S-CSSO-G2; Maximum Drain-Source On Resistance: .016 ohm;
Datasheet JANSR2N7524U2A Datasheet
In Stock384
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 185 ns
Maximum Drain Current (ID): 56 A
Maximum Pulsed Drain Current (IDM): 224 A
Surface Mount: YES
No. of Terminals: 2
Maximum Power Dissipation (Abs): 250 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 135 ns
JESD-30 Code: S-CSSO-G2
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .016 ohm
Avalanche Energy Rating (EAS): 725 mJ
Maximum Feedback Capacitance (Crss): 267 pF
Polarity or Channel Type: P-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 60 V
Additional Features: HIGH RELIABILITY
Reference Standard: MIL-19500; RH - 100K Rad(Si)
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