Infineon Technologies - JANSR2N7549T1

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JANSR2N7549T1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number JANSR2N7549T1
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 208 W; Terminal Position: SINGLE; Case Connection: ISOLATED;
Datasheet JANSR2N7549T1 Datasheet
In Stock819
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 30 A
Maximum Pulsed Drain Current (IDM): 120 A
Sub-Category: Other Transistors
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): 208 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: S-XSFM-P3
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: PIN/PEG
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: .103 ohm
Avalanche Energy Rating (EAS): 332 mJ
JEDEC-95 Code: TO-254AA
Polarity or Channel Type: P-CHANNEL
Minimum DS Breakdown Voltage: 200 V
Qualification: Qualified
Reference Standard: MIL-19500; RH - 100K Rad(Si)
Maximum Drain Current (Abs) (ID): 30 A
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