Infineon Technologies - JANSR2N7561T2

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JANSR2N7561T2 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number JANSR2N7561T2
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 25 W; Terminal Position: BOTTOM; Case Connection: DRAIN;
Datasheet JANSR2N7561T2 Datasheet
In Stock555
NAME DESCRIPTION
Package Body Material: METAL
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 125 ns
Maximum Drain Current (ID): 5.2 A
Maximum Pulsed Drain Current (IDM): 20.8 A
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): 25 W
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
Maximum Turn Off Time (toff): 75 ns
JESD-30 Code: O-MBCY-W3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: WIRE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .42 ohm
Avalanche Energy Rating (EAS): 142 mJ
Maximum Feedback Capacitance (Crss): 8 pF
JEDEC-95 Code: TO-205AF
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 250 V
Qualification: Qualified
Reference Standard: MIL-19500; RH - 100K Rad(Si)
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