JANSR2N7652U2A by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	JANSR2N7652U2A
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Maximum Drain-Source On Resistance: .004 ohm; No. of Elements: 1;
Datasheet	JANSR2N7652U2A Datasheet
In Stock	781

NAME	DESCRIPTION
Package Body Material:	CERAMIC, METAL-SEALED COFIRED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	210 ns
Maximum Drain Current (ID):	100 A
Maximum Pulsed Drain Current (IDM):	400 A
Surface Mount:	YES
No. of Terminals:	2
Maximum Power Dissipation (Abs):	250 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	179 ns
JESD-30 Code:	S-CSSO-G2
No. of Elements:	1
Package Shape:	SQUARE
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.004 ohm
Avalanche Energy Rating (EAS):	4000 mJ
Maximum Feedback Capacitance (Crss):	30 pF
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	60 V
Reference Standard:	MIL-19500; MIL-STD-750; RH - 100K Rad(Si)

Pricing (USD)

Qty.	Unit Price	Ext. Price
781	-	-

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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Moisture Sensitivity Level (MSL): 1; Maximum Operating Temperature: 150 Cel;