JANTXV2N6766 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	JANTXV2N6766
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Qualification: Qualified; Package Style (Meter): FLANGE MOUNT;
Datasheet	JANTXV2N6766 Datasheet
In Stock	1,248

NAME	DESCRIPTION
Package Body Material:	METAL
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	30 A
Maximum Pulsed Drain Current (IDM):	120 A
Sub-Category:	FET General Purpose Power
Surface Mount:	NO
Terminal Finish:	TIN LEAD
No. of Terminals:	2
Maximum Power Dissipation (Abs):	150 W
Terminal Position:	BOTTOM
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	O-MBFM-P2
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	PIN/PEG
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.09 ohm
Avalanche Energy Rating (EAS):	60 mJ
JEDEC-95 Code:	TO-204
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e0
Minimum DS Breakdown Voltage:	200 V
Qualification:	Qualified
Additional Features:	HIGH RELIABILITY
Reference Standard:	MIL-19500/543
Maximum Drain Current (Abs) (ID):	30 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,248	-	-

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RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): 1 V; No. of Elements: 1; Maximum Output Current: .2 A; Config: SINGLE;

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