Infineon Technologies - JANTXV2N7222

JANTXV2N7222 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number JANTXV2N7222
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Terminal Position: SINGLE; Maximum Pulsed Drain Current (IDM): 32 A;
Datasheet JANTXV2N7222 Datasheet
In Stock700
NAME DESCRIPTION
Package Body Material: METAL
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 8 A
Maximum Pulsed Drain Current (IDM): 32 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
Terminal Finish: TIN LEAD
No. of Terminals: 3
Maximum Power Dissipation (Abs): 125 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: S-MSFM-P3
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: PIN/PEG
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: .95 ohm
Avalanche Energy Rating (EAS): 700 mJ
JEDEC-95 Code: TO-254AA
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 500 V
Qualification: Qualified
Additional Features: HIGH RELIABILITY
Reference Standard: MIL-19500/596
Maximum Drain Current (Abs) (ID): 8 A
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Pricing (USD)

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