Infineon Technologies - JANTXVR2N7389

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JANTXVR2N7389 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number JANTXVR2N7389
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; Reference Standard: MIL-19500; RH - 100K Rad(Si); Case Connection: DRAIN;
In Stock106
NAME DESCRIPTION
Package Body Material: METAL
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 6.5 A
JEDEC-95 Code: TO-205AF
Polarity or Channel Type: P-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 100 V
Qualification: Qualified
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-MBCY-W3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: WIRE
Operating Mode: ENHANCEMENT MODE
Reference Standard: MIL-19500; RH - 100K Rad(Si)
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .3 ohm
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