Infineon Technologies - LPT80A

  1. Home
  2. Infineon Technologies - LPT80A
LPT80A by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number LPT80A
Description Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Power Dissipation: .1 W; Maximum Operating Temperature: 100 Cel; Minimum Operating Temperature: -40 Cel;
Datasheet LPT80A Datasheet
In Stock4,866
NAME DESCRIPTION
Peak Wavelength (nm): 870
Maximum Power Dissipation: .1 W
Maximum Operating Temperature: 100 Cel
Sub-Category: Photo Transistors
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
Minimum Operating Temperature: -40 Cel
Mounting Feature: THROUGH HOLE MOUNT
Maximum On State Current: .05 A
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
4,866 - -

Popular Products

Category Top Products

TPS611 by Toshiba

TPS611

Toshiba

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum On State Current: .05 A; Additional Features: HIGH SENSITIVITY; Maximum Dark Current: 100 nA; Configuration: SINGLE;
TPS616(BC,F) by Toshiba

TPS616(BC,F)

Toshiba

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Size: 3.1 mm; Peak Wavelength (nm): 900; Maximum Power Dissipation: .075 W; Configuration: SINGLE;
TPS612-AB by Toshiba

TPS612-AB

Toshiba

PHOTO TRANSISTOR; Peak Wavelength (nm): 870; Configuration: SINGLE; Infrared (IR) Range: YES; Minimum Collector-emitter Breakdown Voltage: 20 V; Size: 3 mm;
TIL78 by Texas Instruments

TIL78

Texas Instruments

TIL78 by Texas Instruments is a phototransistor with max temp of 85°C and min temp of -40°C. It has a max power dissipation of 0.05W, dark current of 25nA, and response time of 8μs. Ideal for applications requiring precise light detection in environments with temperature variations.
TPS605(LB)-B by Toshiba

TPS605(LB)-B

Toshiba

PHOTO DARLINGTON; Minimum Operating Temperature: 0 Cel; Minimum Collector-emitter Breakdown Voltage: 30 V; Maximum Dark Current: 250 nA; Shape: ROUND; Maximum Operating Temperature: 70 Cel;
BPX84 by Osram Opto Semiconductors

BPX84

Osram Opto Semiconductors

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Nickel (Sn/Ni); Peak Wavelength (nm): 850; JESD-609 Code: e2; Minimum Collector-emitter Breakdown Voltage: 32 V;
TPS616-C by Toshiba

TPS616-C

Toshiba

PHOTO TRANSISTOR; Infrared (IR) Range: YES; Peak Wavelength (nm): 900; Minimum Collector-emitter Breakdown Voltage: 30 V; Nominal Light Current: .03 mA; Maximum Operating Temperature: 85 Cel;
VEMT2523SLX01 by Vishay Intertechnology

VEMT2523SLX01

Vishay Intertechnology

Vishay Intertechnology's VEMT2523SLX01 is an 850nm peak wavelength phototransistor with a max operating temperature of 100°C. With a nominal light current of 2.7mA and min collector-emitter breakdown voltage of 20V, it is ideal for applications requiring precise light detection in environments ranging from -40°C to 100°C.
TIL81 by Texas Instruments

TIL81

Texas Instruments

TIL81 by Texas Instruments is a phototransistor with peak wavelength of 900nm. It has max operating temp of 125°C and min of -60°C. With max power dissipation of 0.25W, it's ideal for applications requiring fast response time such as light sensing in industrial automation.
1N5722 by Texas Instruments

1N5722

Texas Instruments

1N5722 by Texas Instruments is a single phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, dissipating up to 0.05W power. Ideal for applications requiring fast response time and IR detection in through-hole mounting setups.
TPS607A by Toshiba

TPS607A

Toshiba

PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 75 Cel; Maximum On State Current: .05 A; Peak Wavelength (nm): 720;
SFH3211-4 by Infineon Technologies

SFH3211-4

Infineon Technologies

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .015 A; Maximum Dark Current: 200 nA; Minimum Operating Temperature: -40 Cel;
BPY62-3/4 by Osram Opto Semiconductors

BPY62-3/4

Osram Opto Semiconductors

Osram Opto Semiconductors' BPY62-3/4 is an 830nm peak wavelength phototransistor with a max temp of 125°C. It has a nominal light current of 5.8mA and max response time of 0.000007s. Ideal for applications requiring IR detection, it features through-hole mounting and can handle up to 0.1A on-state current.
BPW17N by Vishay Intertechnology

BPW17N

Vishay Intertechnology

The Vishay Intertechnology BPW17N is a 1.8mm single phototransistor with peak wavelength of 825nm. It operates at up to 100°C, with max power dissipation of 0.1W and response time of 0.0000016s. Ideal for applications requiring fast light detection in the infrared range, such as optical sensors and proximity detectors.
SFH3410-1 by Infineon Technologies

SFH3410-1

Infineon Technologies

Photo Transistors; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -40 Cel; JESD-609 Code: e0; Peak Wavelength (nm): 570;
QSD124 by Qt Optoelectronics

QSD124

Qt Optoelectronics

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Power Dissipation: .1 W; Maximum Operating Temperature: 100 Cel; Configuration: SINGLE;
SFH320-2 by Infineon Technologies

SFH320-2

Infineon Technologies

Photo Transistors; Mounting Feature: SURFACE MOUNT; Maximum Response Time: .000006 s; Minimum Operating Temperature: -55 Cel; Maximum Power Dissipation: .165 W; Maximum Dark Current: 200 nA;
TPS615(B,F) by Toshiba

TPS615(B,F)

Toshiba

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Shape: ROUND; Peak Wavelength (nm): 800; Minimum Collector-emitter Breakdown Voltage: 30 V; No. of Functions: 1;
TPS604 by Toshiba

TPS604

Toshiba

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); No. of Functions: 1; Shape: ROUND; Maximum Dark Current: 200 nA;
QSD124A4R0 by Fairchild Semiconductor

QSD124A4R0

Fairchild Semiconductor

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Matte Tin (Sn); Shape: ROUND; Minimum Collector-emitter Breakdown Voltage: 30 V; JESD-609 Code: e3;