Infineon Technologies - MMBTA56LT1XT

MMBTA56LT1XT by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number MMBTA56LT1XT
Description PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A;
Datasheet MMBTA56LT1XT Datasheet
In Stock425
NAME DESCRIPTION
Nominal Transition Frequency (fT): 100 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .5 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 100
No. of Terminals: 3
Maximum Power Dissipation (Abs): .33 W
Maximum Collector-Emitter Voltage: 80 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Additional Features: TR, 7 INCH: 3000
Maximum Operating Temperature: 150 Cel
Maximum Collector-Base Capacitance: 7 pF
Reference Standard: AEC-Q101
Maximum VCEsat: .25 V
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Pricing (USD)

Qty. Unit Price Ext. Price
425 $0.035 $14.875

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