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Manufacturer | Infineon Technologies |
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Manufacturer's Part Number | OM6228SS |
Description | N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 165 W; Maximum Pulsed Drain Current (IDM): 85 A; Additional Features: HIGH RELIABILITY; |
Datasheet | OM6228SS Datasheet |
In Stock | 521 |
NAME | DESCRIPTION |
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Package Body Material: | METAL |
Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 22 A |
Maximum Pulsed Drain Current (IDM): | 85 A |
Sub-Category: | FET General Purpose Power |
Surface Mount: | NO |
Terminal Finish: | TIN LEAD |
No. of Terminals: | 6 |
Maximum Power Dissipation (Abs): | 165 W |
Terminal Position: | SINGLE |
Package Style (Meter): | FLANGE MOUNT |
JESD-30 Code: | R-MSFM-P6 |
No. of Elements: | 2 |
Package Shape: | RECTANGULAR |
Terminal Form: | PIN/PEG |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | ISOLATED |
Maximum Drain-Source On Resistance: | .27 ohm |
Avalanche Energy Rating (EAS): | 1000 mJ |
Polarity or Channel Type: | N-CHANNEL |
JESD-609 Code: | e0 |
Minimum DS Breakdown Voltage: | 500 V |
Qualification: | Not Qualified |
Additional Features: | HIGH RELIABILITY |
Maximum Drain Current (Abs) (ID): | 22 A |