Infineon Technologies - OM6228SS

OM6228SS by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number OM6228SS
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 165 W; Maximum Pulsed Drain Current (IDM): 85 A; Additional Features: HIGH RELIABILITY;
Datasheet OM6228SS Datasheet
In Stock521
NAME DESCRIPTION
Package Body Material: METAL
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 22 A
Maximum Pulsed Drain Current (IDM): 85 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
Terminal Finish: TIN LEAD
No. of Terminals: 6
Maximum Power Dissipation (Abs): 165 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-MSFM-P6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: PIN/PEG
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: .27 ohm
Avalanche Energy Rating (EAS): 1000 mJ
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 500 V
Qualification: Not Qualified
Additional Features: HIGH RELIABILITY
Maximum Drain Current (Abs) (ID): 22 A
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Pricing (USD)

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