Infineon Technologies - OM6230SST

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OM6230SST by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number OM6230SST
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Qualification: Not Qualified; Maximum Drain Current (ID): 10 A;
In Stock742
NAME DESCRIPTION
Package Body Material: METAL
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 10 A
Maximum Pulsed Drain Current (IDM): 30 A
Surface Mount: NO
Terminal Finish: TIN LEAD
No. of Terminals: 6
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-MSFM-P6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: PIN/PEG
Operating Mode: ENHANCEMENT MODE
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: 1.3 ohm
Avalanche Energy Rating (EAS): 500 mJ
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 1000 V
Qualification: Not Qualified
Additional Features: HIGH RELIABILITY
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