Infineon Technologies - OMD200(6SIP)

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OMD200(6SIP) by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number OMD200(6SIP)
Description Power Field-Effect Transistors; Maximum Power Dissipation (Abs): 125 W; No. of Elements: 2; Maximum Drain Current (Abs) (ID): 25 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel;
Datasheet OMD200(6SIP) Datasheet
In Stock809
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 125 W
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 2
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 25 A
Maximum Drain Current (Abs) (ID): 25 A
Sub-Category: FET General Purpose Power
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