Infineon Technologies - PTFA041501F

  1. Home
  2. Infineon Technologies - PTFA041501F
PTFA041501F by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number PTFA041501F
Description RF Power Field-Effect Transistors;
Datasheet PTFA041501F Datasheet
In Stock118
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
118 - -

Popular Products

Category Top Products

934061174112 by NXP Semiconductors

934061174112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): FLATPACK; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;
A2I25D025NR1 by Freescale Semiconductor

A2I25D025NR1

Freescale Semiconductor

RF Power Field-Effect Transistors; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 3; JESD-609 Code: e3;
A5G35S008N-3400 by NXP Semiconductors

A5G35S008N-3400

NXP Semiconductors

RF Power Field-Effect Transistors;
934065978118 by NXP Semiconductors

934065978118

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Case Connection: SOURCE; Transistor Element Material: SILICON; Package Shape: RECTANGULAR;
PD84010S-E by STMicroelectronics

PD84010S-E

STMicroelectronics

PD84010S-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 8 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This compact surface-mount transistor ensures efficient performance up to 165 °C.
A2V09H525-04NR6 by NXP Semiconductors

A2V09H525-04NR6

NXP Semiconductors

RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40; Terminal Finish: TIN; JESD-609 Code: e3;
MRF134 by M/a-com Technology Solutions

MRF134

M/a-com Technology Solutions

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 17.5 W; Maximum Drain Current (ID): .9 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
PD84008TR-E by STMicroelectronics

PD84008TR-E

STMicroelectronics

PD84008TR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 25 V, and operates in the ultra-high frequency band. This surface-mount transistor ensures efficient performance with a max power dissipation of 79 W.
PD55008STR-E by STMicroelectronics

PD55008STR-E

STMicroelectronics

PD55008STR-E by STMicroelectronics is an N-CHANNEL RF Power Field Effect Transistor (FET) with a min DS breakdown voltage of 40V. It is used as an amplifier in the ultra high frequency band, with a max drain current of 4A and a max power dissipation of 52.8W.
BLL6H1214-500,112 by Ampleon Netherlands B V

BLL6H1214-500,112

Ampleon Netherlands B V

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Minimum DS Breakdown Voltage: 100 V; Case Connection: SOURCE; Maximum Drain Current (ID): 45 A;
STAC2953 by STMicroelectronics

STAC2953

STMicroelectronics

RF Power Field-Effect Transistors;
CG2H40045P by Wolfspeed

CG2H40045P

Wolfspeed

CG2H40045P by Wolfspeed is an N-CHANNEL RF Power FET with 84V DS Breakdown Voltage. Featuring 15dB Power Gain, it operates in S BAND for AMPLIFIER applications. Utilizing GALLIUM NITRIDE tech, it has a max ID of 6A and can withstand temps from -40 to 150 °C.
A2T18S165-12SR3 by NXP Semiconductors

A2T18S165-12SR3

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
934061965112 by NXP Semiconductors

934061965112

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Transistor Application: AMPLIFIER; Minimum DS Breakdown Voltage: 110 V; Package Shape: RECTANGULAR;
934065661112 by NXP Semiconductors

934065661112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Maximum Drain Current (ID): 33 A; Transistor Element Material: SILICON;
SD56060 by STMicroelectronics

SD56060

STMicroelectronics

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
D1007UK by Tt Electronics Plc

D1007UK

Tt Electronics Plc

D1007UK by Tt Electronics Plc is an N-CHANNEL RF Power FET with a 70V DS Breakdown Voltage. It operates in the Ultra High Frequency Band, featuring a COMMON SOURCE configuration and METAL-OXIDE SEMICONDUCTOR technology. Ideal for AMPLIFIER applications, this transistor has a max operating temperature of 200°C and comes in a FLANGE MOUNT package style.
PD54008-E by STMicroelectronics

PD54008-E

STMicroelectronics

STMicroelectronics PD54008-E is an N-CHANNEL RF Power FET with 25V DS Breakdown Voltage. It operates in ULTRA HIGH FREQUENCY BAND, suitable for AMPLIFIER applications. With 5A Drain Current and 73W Power Dissipation, it's ideal for high-power amplification needs.
PTFA080551EV4R250XTMA1 by Wolfspeed

PTFA080551EV4R250XTMA1

Wolfspeed

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: S-CDFM-F2; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
A3T21H360W23SR6 by NXP Semiconductors

A3T21H360W23SR6

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;