Infineon Technologies - PTFA091201E-120W

  1. Home
  2. Infineon Technologies - PTFA091201E-120W
PTFA091201E-120W by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number PTFA091201E-120W
Description RF Power Field-Effect Transistors;
Datasheet PTFA091201E-120W Datasheet
In Stock678
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
678 - -

Popular Products

Category Top Products

934061844118 by NXP Semiconductors

934061844118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): 3.5 A; Terminal Position: DUAL; Transistor Application: AMPLIFIER;
TIM0910-15L by Toshiba

TIM0910-15L

Toshiba

The Toshiba TIM0910-15L is an N-channel RF Power FET with a 15V DS breakdown voltage, ideal for amplifier applications in X band. Featuring a ceramic-metal sealed co-fired package, it operates in depletion mode with 11.5A max drain current and 60W power dissipation at 175°C ambient temperature.
AFT09H310-03SR6 by Freescale Semiconductor

AFT09H310-03SR6

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Maximum Time At Peak Reflow Temperature (s): 40; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1; Peak Reflow Temperature (C): 260;
A2I22D050NR1 by NXP Semiconductors

A2I22D050NR1

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40; Terminal Finish: TIN; JESD-609 Code: e3;
AFT05MS031GNR1 by NXP Semiconductors

AFT05MS031GNR1

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 294 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Finish: TIN;
CGH40025P by Wolfspeed

CGH40025P

Wolfspeed

CGH40025P by Wolfspeed is an N-CHANNEL RF Power FET with a CERAMIC, METAL-SEALED COFIRED package. It operates in ENHANCEMENT MODE for AMPLIFIER applications in the C BAND frequency range. Featuring GALLIUM NITRIDE technology, it has a 120V DS Breakdown Voltage and can withstand temperatures up to 175°C.
MRF374 by Freescale Semiconductor

MRF374

Freescale Semiconductor

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 270 W; Operating Mode: ENHANCEMENT MODE; Case Connection: SOURCE;
STAC1011-500 by STMicroelectronics

STAC1011-500

STMicroelectronics

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
LET16060C by STMicroelectronics

LET16060C

STMicroelectronics

LET16060C by STMicroelectronics is a N-CHANNEL RF Power FET with 80V DS Breakdown Voltage, 12A Drain Current, and 100W Power Dissipation. It's used in L BAND applications as an amplifier in enhancement mode operation.
PD20010S-E by STMicroelectronics

PD20010S-E

STMicroelectronics

PD20010S-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, a breakdown voltage of 40 V, and operates in the L band. This surface-mount transistor excels in high-frequency performance with a power dissipation of up to 59 W.
A2T08VD021NT1 by NXP Semiconductors

A2T08VD021NT1

NXP Semiconductors

RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 40; Terminal Finish: Tin (Sn);
MW6S010GNR1 by NXP Semiconductors

MW6S010GNR1

NXP Semiconductors

NXP Semiconductors' MW6S010GNR1 is a RF Power FET with 68V DS Breakdown Voltage, suitable for L Band applications. It operates in Enhancement Mode, has 61.4W Max Power Dissipation, and features N-Channel configuration for amplifier circuits.
SD3933 by STMicroelectronics

SD3933

STMicroelectronics

SD3933 by STMicroelectronics is an N-channel RF power FET designed for ultra-high frequency applications. It features a max drain current of 20 A, a breakdown voltage of 250 V, and can dissipate up to 648 W. Ideal for high-performance RF amplifiers, it operates efficiently in enhancement mode.
PD84008TR-E by STMicroelectronics

PD84008TR-E

STMicroelectronics

PD84008TR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 25 V, and operates in the ultra-high frequency band. This surface-mount transistor ensures efficient performance with a max power dissipation of 79 W.
MRFE6VS25GNR1 by NXP Semiconductors

MRFE6VS25GNR1

NXP Semiconductors

NXP Semiconductors' MRFE6VS25GNR1 is a single N-channel RF Power FET with 24.5 dB power gain, operating in the ultra-high frequency band. It features a min DS breakdown voltage of 133 V and can handle up to 25 W power dissipation. Ideal for applications requiring high-power amplification in the RF domain.
TGI1314-50L by Toshiba

TGI1314-50L

Toshiba

Toshiba's TGI1314-50L is an N-channel RF Power FET with 50V DS breakdown voltage, ideal for KU band applications. Featuring a ceramic-metal sealed co-fired package, it operates in depletion mode with 15A drain current and 140W power dissipation at max 175°C temperature.
PD55035 by STMicroelectronics

PD55035

STMicroelectronics

PD55035 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 8.5 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This compact surface mount device ensures efficient performance in demanding environments.
MRFE6VP8600HR5 by Freescale Semiconductor

MRFE6VP8600HR5

Freescale Semiconductor

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 1052 W; Operating Mode: ENHANCEMENT MODE; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
MRF141G by M/a-com Technology Solutions

MRF141G

M/a-com Technology Solutions

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Operating Mode: ENHANCEMENT MODE;
MRF1570FNT1 by NXP Semiconductors

MRF1570FNT1

NXP Semiconductors

NXP Semiconductors' MRF1570FNT1 is an N-CHANNEL RF Power FET with 2 elements, operating in the ultra high frequency band. It features a common source configuration, with a max power dissipation of 165W and a min DS breakdown voltage of 40V. Ideal for amplifier applications, this transistor has a package style of flange mount and operates in enhancement mode at temperatures up to 200°C.