Infineon Technologies - PTFA181001F-100W

  1. Home
  2. Infineon Technologies - PTFA181001F-100W
PTFA181001F-100W by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number PTFA181001F-100W
Description RF Power Field-Effect Transistors;
Datasheet PTFA181001F-100W Datasheet
In Stock809
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
809 - -

Popular Products

Category Top Products

934061276112 by NXP Semiconductors

934061276112

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Minimum DS Breakdown Voltage: 65 V; Transistor Element Material: SILICON; JESD-30 Code: R-CDFM-F4;
BLF7G22LS-160,112 by Ampleon Netherlands B V

BLF7G22LS-160,112

Ampleon Netherlands B V

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Drain Current (ID): 36 A; Peak Reflow Temperature (C): NOT SPECIFIED;
SD2951-10 by STMicroelectronics

SD2951-10

STMicroelectronics

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
CGHV1F006S by Wolfspeed

CGHV1F006S

Wolfspeed

CGHV1F006S by Wolfspeed is an N-CHANNEL RF Power FET with a 100V DS Breakdown Voltage. Ideal for KU BAND applications, it features Gallium Nitride technology, 0.95A Drain Current, and operates in DEPLETION MODE. This SMALL OUTLINE transistor has 12 terminals and is suitable for AMPLIFIER use.
934065319118 by NXP Semiconductors

934065319118

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR;
LET9070FB by STMicroelectronics

LET9070FB

STMicroelectronics

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
MRF300AN-81MHZ by NXP Semiconductors

MRF300AN-81MHZ

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
SD2943 by STMicroelectronics

SD2943

STMicroelectronics

SD2943 by STMicroelectronics is an N-CHANNEL RF Power FET with a 130V DS Breakdown Voltage. It operates in the ULTRA HIGH FREQUENCY BAND, with a max ID of 40A and 648W power dissipation. Ideal for AMPLIFIER applications due to its ENHANCEMENT MODE operation and SOURCE case connection.
CLF1G0035S-100 by NXP Semiconductors

CLF1G0035S-100

NXP Semiconductors

RF Power Field-Effect Transistors;
934061173135 by NXP Semiconductors

934061173135

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Highest Frequency Band: S BAND; Transistor Application: AMPLIFIER;
PD20010STR-E by STMicroelectronics

PD20010STR-E

STMicroelectronics

PD20010STR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, a breakdown voltage of 40 V, and operates in the L band. This surface-mount transistor ensures efficient performance with a max power dissipation of 59 W.
MRF1570FNT1 by NXP Semiconductors

MRF1570FNT1

NXP Semiconductors

NXP Semiconductors' MRF1570FNT1 is an N-CHANNEL RF Power FET with 2 elements, operating in the ultra high frequency band. It features a common source configuration, with a max power dissipation of 165W and a min DS breakdown voltage of 40V. Ideal for amplifier applications, this transistor has a package style of flange mount and operates in enhancement mode at temperatures up to 200°C.
MRF6V12500HSR5 by Freescale Semiconductor

MRF6V12500HSR5

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Qualification: Not Qualified; Case Connection: SOURCE;
934061172118 by NXP Semiconductors

934061172118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): FLATPACK; Highest Frequency Band: S BAND;
PD84008-E by STMicroelectronics

PD84008-E

STMicroelectronics

PD84008-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 25 V, and operates in the ultra-high frequency band. This compact surface-mount device ensures efficient performance with a max power dissipation of 79 W.
AFT09MS015NT1 by Freescale Semiconductor

AFT09MS015NT1

Freescale Semiconductor

RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Terminal Finish: MATTE TIN; JESD-609 Code: e3;
STAC4932B by STMicroelectronics

STAC4932B

STMicroelectronics

STAC4932B by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a 200V min DS breakdown voltage, operates in the ultra-high frequency band, and supports surface mount with a max temp of 200 °C. Ideal for high-performance RF circuits.
LET9060F by STMicroelectronics

LET9060F

STMicroelectronics

LET9060F by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 12 A, breakdown voltage of 80 V, and operates in the ultra-high frequency band. This surface-mount transistor ensures efficient performance with a max power dissipation of 130 W.
SD57120 by STMicroelectronics

SD57120

STMicroelectronics

SD57120 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 14 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This versatile component is ideal for high-power amplification in compact designs.
CGHV40200PP by Wolfspeed

CGHV40200PP

Wolfspeed

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;