Infineon Technologies - PTFA220081M-8W

  1. Home
  2. Infineon Technologies - PTFA220081M-8W
PTFA220081M-8W by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number PTFA220081M-8W
Description RF Small Signal Field-Effect Transistors;
Datasheet PTFA220081M-8W Datasheet
In Stock646
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
646 - -

Popular Products

Category Top Products

BF992TRL13 by NXP Semiconductors

BF992TRL13

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G4; Terminal Form: GULL WING; No. of Elements: 1;
SHF-0189Z by Sirenza Microdevices

SHF-0189Z

Sirenza Microdevices

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: HETERO-JUNCTION; Package Style (Meter): SMALL OUTLINE; Package Body Material: PLASTIC/EPOXY;
STAC9200 by STMicroelectronics

STAC9200

STMicroelectronics

RF Small Signal Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
MMBFJ305 by National Semiconductor

MMBFJ305

National Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Package Style (Meter): SMALL OUTLINE; Terminal Position: DUAL;
BF244ARLRA by Onsemi

BF244ARLRA

Onsemi

BF244ARLRA by Onsemi is an N-CHANNEL RF FET with 30V DS breakdown voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it has a max ID of 0.1A and operates in DEPLETION MODE. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3 (THROUGH-HOLE).
933171550126 by NXP Semiconductors

933171550126

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Minimum DS Breakdown Voltage: 30 V; No. of Terminals: 3; Maximum Drain Current (ID): .025 A;
3SK168C by Onsemi

3SK168C

Onsemi

3SK168C by Onsemi is an N-CHANNEL RF FET with max drain current of 0.055A and power dissipation of 0.25W. Ideal for applications requiring high frequency signal amplification in environments up to 125 °C, such as RF communication systems and radar equipment.
2N3823 by Vishay Intertechnology

2N3823

Vishay Intertechnology

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Terminal Position: BOTTOM; Package Style (Meter): CYLINDRICAL; Transistor Element Material: SILICON;
BF256B by NXP Semiconductors

BF256B

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Terminal Form: THROUGH-HOLE; No. of Elements: 1;
BF245BRLRM by Onsemi

BF245BRLRM

Onsemi

BF245BRLRM by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications, it operates in DEPLETION MODE at ULTRA HIGH FREQUENCY. With 0.1A ID, this THROUGH-HOLE transistor has a CYLINDRICAL package and JUNCTION technology.
BLM7G1822S-20PBG by Ampleon Netherlands B V

BLM7G1822S-20PBG

Ampleon Netherlands B V

RF Small Signal Field-Effect Transistors;
J309-AMMO by NXP Semiconductors

J309-AMMO

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Element Material: SILICON; Transistor Application: AMPLIFIER; No. of Terminals: 3;
2SK544D by Onsemi

2SK544D

Onsemi

The Onsemi 2SK544D is an N-CHANNEL RF FET with a max drain current of 0.03A, operating in DEPLETION MODE for AMPLIFIER applications. It features a METAL-OXIDE SEMICONDUCTOR technology and operates in the VERY HIGH FREQUENCY BAND, making it suitable for high-frequency signal amplification in various electronic devices.
CE3512K2-C1 by California Eastern Laboratories

CE3512K2-C1

California Eastern Laboratories

CE3512K2-C1 by California Eastern Laboratories is an N-CHANNEL FET for AMPLIFIER applications. Features include 12.5 dB Power Gain, 3 V DS Breakdown Voltage, and X BAND frequency band. It has a SQUARE package with FLAT terminals in MICROWAVE style.
MMBFJ309LT1G by Onsemi

MMBFJ309LT1G

Onsemi

MMBFJ309LT1G by Onsemi is an N-CHANNEL RF FET with a 25V DS Breakdown Voltage, operating in DEPLETION MODE. Ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND, it features a max power dissipation of 0.225W and can withstand temperatures up to 150°C.
BF998R by NXP Semiconductors

BF998R

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; No. of Elements: 2; Operating Mode: DUAL GATE, DEPLETION MODE;
2N5486 by Calogic

2N5486

Calogic

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .31 W; Package Shape: ROUND; Package Style (Meter): CYLINDRICAL;
MMBFU310LT1G by Onsemi

MMBFU310LT1G

Onsemi

MMBFU310LT1G by Onsemi is an N-CHANNEL RF FET with a 25V DS breakdown voltage, operating in DEPLETION MODE. Ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND, it features a small outline package style and max power dissipation of 0.225W.
3SK167-5 by Onsemi

3SK167-5

Onsemi

3SK167-5 by Onsemi is an N-channel RF FET with max drain current of 0.055A and power dissipation of 0.2W. Ideal for applications requiring high frequency signal amplification in environments up to 125 °C, such as RF communication systems and radar equipment.
BF904R,215 by NXP Semiconductors

BF904R,215

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Terminal Form: GULL WING; Maximum Operating Temperature: 150 Cel;