Infineon Technologies - PTFB090901EAV2R0

PTFB090901EAV2R0 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number PTFB090901EAV2R0
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 2; Minimum Power Gain (Gp): 19 dB; No. of Elements: 1;
Datasheet PTFB090901EAV2R0 Datasheet
In Stock537
NAME DESCRIPTION
Minimum Power Gain (Gp): 19 dB
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 2
Minimum DS Breakdown Voltage: 65 V
Terminal Position: DUAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: S-CDFM-F2
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature: 200 Cel
Case Connection: SOURCE
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Pricing (USD)

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