PTFB093608FVV3R2 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	PTFB093608FVV3R2
Description	N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Maximum Operating Temperature: 200 Cel;
Datasheet	PTFB093608FVV3R2 Datasheet
In Stock	250

NAME	DESCRIPTION
Minimum Power Gain (Gp):	18 dB
Package Body Material:	CERAMIC, METAL-SEALED COFIRED
Configuration:	COMMON SOURCE, 2 ELEMENTS
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	AMPLIFIER
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	6
Minimum DS Breakdown Voltage:	65 V
Terminal Position:	QUAD
Package Style (Meter):	FLATPACK
JESD-30 Code:	R-CQFP-X6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Operating Mode:	ENHANCEMENT MODE
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature:	200 Cel
Case Connection:	SOURCE

Pricing (USD)

Qty.	Unit Price	Ext. Price
250	-	-

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