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Manufacturer | Infineon Technologies |
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Manufacturer's Part Number | PTFB183404FV2XWSA1 |
Description | N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON; Package Shape: RECTANGULAR; |
Datasheet | PTFB183404FV2XWSA1 Datasheet |
In Stock | 208 |
NAME | DESCRIPTION |
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Package Body Material: | CERAMIC, METAL-SEALED COFIRED |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | COMMON SOURCE, 2 ELEMENTS |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | AMPLIFIER |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
No. of Terminals: | 6 |
Minimum DS Breakdown Voltage: | 65 V |
Qualification: | Not Qualified |
Terminal Position: | DUAL |
Package Style (Meter): | FLATPACK |
JESD-30 Code: | R-CDFP-F6 |
No. of Elements: | 2 |
Package Shape: | RECTANGULAR |
Terminal Form: | FLAT |
Operating Mode: | ENHANCEMENT MODE |
Additional Features: | HIGH RELIABILITY |
Highest Frequency Band: | L BAND |
Case Connection: | SOURCE |
Peak Reflow Temperature (C): | NOT SPECIFIED |