Infineon Technologies - PTFB213208FVV1

  1. Home
  2. Infineon Technologies - PTFB213208FVV1
PTFB213208FVV1 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number PTFB213208FVV1
Description RF Power Field-Effect Transistors;
Datasheet PTFB213208FVV1 Datasheet
In Stock36
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
36 - -

Popular Products

Category Top Products

934065122112 by NXP Semiconductors

934065122112

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; No. of Elements: 2; Transistor Application: SWITCHING; Package Shape: RECTANGULAR;
PD85006TR-E by STMicroelectronics

PD85006TR-E

STMicroelectronics

STMicroelectronics PD85006TR-E is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage and 2A Drain Current. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features a 36.5W Power Dissipation, ENHANCEMENT MODE operation, and GULL WING terminals for surface mounting.
A3G26D055NT4 by NXP Semiconductors

A3G26D055NT4

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): 3; Peak Reflow Temperature (C): 260;
PD85015S-E by STMicroelectronics

PD85015S-E

STMicroelectronics

PD85015S-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This surface-mount transistor ensures efficient performance with a max power dissipation of 59 W.
A2T18H455W23NR6 by NXP Semiconductors

A2T18H455W23NR6

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): 3; Peak Reflow Temperature (C): 260;
CGHV37400F by Wolfspeed

CGHV37400F

Wolfspeed

RF Power Field-Effect Transistors;
ST50V10100 by STMicroelectronics

ST50V10100

STMicroelectronics

RF Power Field-Effect Transistors;
AFT09MS007NT1 by Freescale Semiconductor

AFT09MS007NT1

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 182 W; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 150 Cel;
934061174112 by NXP Semiconductors

934061174112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): FLATPACK; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;
MRF151A by M/a-com Technology Solutions

MRF151A

M/a-com Technology Solutions

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Terminal Form: FLAT; Maximum Drain Current (ID): 16 A;
934056375112 by NXP Semiconductors

934056375112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; Maximum Drain Current (ID): 2.2 A; No. of Terminals: 2;
D2225UK by Tt Electronics Plc

D2225UK

Tt Electronics Plc

D2225UK by Tt Electronics Plc is an N-CHANNEL RF Power FET with 2 elements in a COMMON SOURCE configuration. It operates in the ULTRA HIGH FREQUENCY BAND, with a max ID of 4A and VDS of 40V. Ideal for AMPLIFIER applications, this transistor has GULL WING terminals and can withstand up to 200°C operating temperature.
D2003UK by Tt Electronics Plc

D2003UK

Tt Electronics Plc

D2003UK by Tt Electronics Plc is an N-CHANNEL RF Power FET with a 65V DS Breakdown Voltage. It operates in the Ultra High Frequency Band, featuring a COMMON SOURCE configuration and METAL-OXIDE SEMICONDUCTOR technology. Ideal for AMPLIFIER applications, it has a max Drain Current of 1A and can withstand temperatures up to 200°C.
PD60004S by STMicroelectronics

PD60004S

STMicroelectronics

PD60004S by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a min DS breakdown voltage of 65V, operates in enhancement mode, and supports L band frequencies. Its compact SO package ensures efficient surface mounting.
934055916135 by NXP Semiconductors

934055916135

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Qualification: Not Qualified; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
AFT05MS031NR1 by NXP Semiconductors

AFT05MS031NR1

NXP Semiconductors

NXP Semiconductors' AFT05MS031NR1 is an N-CHANNEL RF Power FET with 294W power dissipation, suitable for surface mount applications. Featuring METAL-OXIDE SEMICONDUCTOR technology, it operates up to 150°C and can withstand peak reflow temperature of 260°C. Ideal for high-power RF amplification in various electronic devices.
RF5L08350CB4 by STMicroelectronics

RF5L08350CB4

STMicroelectronics

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
MMRF1014NT1 by NXP Semiconductors

MMRF1014NT1

NXP Semiconductors

The NXP Semiconductors MMRF1014NT1 is an N-CHANNEL RF Power FET for AMPLIFIER applications. It operates in ENHANCEMENT MODE with highest frequency band L BAND. This transistor features a PLASTIC/EPOXY package, NO LEAD terminals, and METAL-OXIDE SEMICONDUCTOR technology.
ST05250 by STMicroelectronics

ST05250

STMicroelectronics

ST05250 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a 90V min DS breakdown voltage, operates in the ultra-high frequency band, and supports a max temp of 200 °C. Ideal for surface mount configurations, it enhances performance in demanding environments.
STAC1214-350 by STMicroelectronics

STAC1214-350

STMicroelectronics

RF Power Field-Effect Transistors;