Infineon Technologies - PTFC260202FCV1R0

  1. Home
  2. Infineon Technologies - PTFC260202FCV1R0
PTFC260202FCV1R0 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number PTFC260202FCV1R0
Description RF Power Field-Effect Transistors;
Datasheet PTFC260202FCV1R0 Datasheet
In Stock943
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
943 - -

Popular Products

Category Top Products

PD55015-E by STMicroelectronics

PD55015-E

STMicroelectronics

STMicroelectronics' PD55015-E is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage, ideal for AMPLIFIER applications. Operating in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY BAND, it offers 5A Drain Current and 73W Power Dissipation. The transistor features GULL WING terminals, METAL-OXIDE SEMICONDUCTOR tech, and can withstand up to 165°C operating temp.
CGHV40100F by Wolfspeed

CGHV40100F

Wolfspeed

Wolfspeed's CGHV40100F is an N-CHANNEL RF FET with 150V DS breakdown voltage. Ideal for S BAND applications, it features GaN technology, 8.7A max drain current, and DEPLETION MODE operation in a FLANGE MOUNT package.
PTVA101K02EVV1R0XTMA1 by Wolfspeed

PTVA101K02EVV1R0XTMA1

Wolfspeed

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; Transistor Element Material: SILICON; Peak Reflow Temperature (C): NOT SPECIFIED;
SD56150 by STMicroelectronics

SD56150

STMicroelectronics

SD56150 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 17 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. Its compact flange mount design ensures efficient performance in various electronic devices.
STAC3932B by STMicroelectronics

STAC3932B

STMicroelectronics

STAC3932B by STMicroelectronics is an N-channel RF power FET designed for ultra-high frequency applications. It features a max drain current of 20 A, breakdown voltage of 250 V, and power dissipation up to 625 W. Ideal for high-performance RF amplification in compact designs.
CGHV96050F2 by Wolfspeed

CGHV96050F2

Wolfspeed

Wolfspeed's CGHV96050F2 is an N-CHANNEL RF Power FET for X BAND applications. Features include 100V DS Breakdown Voltage, 10dB Power Gain, and 6A Drain Current. Ideal for AMPLIFIER use with HIGH ELECTRON MOBILITY GaN technology, operating from -40°C to 125°C in a FLANGE MOUNT package.
SD57045-01 by STMicroelectronics

SD57045-01

STMicroelectronics

SD57045-01 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This surface-mount transistor ensures reliable performance up to 200 °C.
SD56120 by STMicroelectronics

SD56120

STMicroelectronics

SD56120 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications, featuring a max drain current of 14 A and a breakdown voltage of 65 V. It operates in enhancement mode within the ultra-high frequency band. This surface-mount device offers high power dissipation up to 217 W, ideal for demanding RF applications.
FLL177ME by Fujitsu Semiconductor America

FLL177ME

Fujitsu Semiconductor America

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Transistor Element Material: GALLIUM ARSENIDE;
PD55008TR-E by STMicroelectronics

PD55008TR-E

STMicroelectronics

STMicroelectronics PD55008TR-E is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage, ideal for AMPLIFIER applications. It operates in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY BAND, handling up to 4A Drain Current and dissipating 52.8W power. The transistor features GULL WING terminals, SILICON element material, and SOURCE case connection for high-performance RF amplification.
A2G22S190-01SR3 by NXP Semiconductors

A2G22S190-01SR3

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
MRF186 by NXP Semiconductors

MRF186

NXP Semiconductors

NXP Semiconductors' MRF186 is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. Featuring a COMMON SOURCE configuration and METAL-OXIDE SEMICONDUCTOR technology, it has a max power dissipation of 162.5W at 200°C ambient temperature.
PD54008L by STMicroelectronics

PD54008L

STMicroelectronics

PD54008L by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, a breakdown voltage of 25 V, and operates in the ultra-high frequency band. This surface-mount device excels in high-power scenarios with a dissipation of up to 44 W.
A5G07H800W19NR3 by NXP Semiconductors

A5G07H800W19NR3

NXP Semiconductors

RF Power Field-Effect Transistors;
PTVA101K02EV-V1-R0 by Wolfspeed

PTVA101K02EV-V1-R0

Wolfspeed

PTVA101K02EV-V1-R0 by Wolfspeed is an N-CHANNEL RF Power FET with 105V DS Breakdown Voltage, 17dB Power Gain, and L BAND frequency. It is a COMMON SOURCE amplifier suitable for ENHANCEMENT MODE operation in applications requiring high power amplification in the L Band.
RF4L10700CB4 by STMicroelectronics

RF4L10700CB4

STMicroelectronics

RF Power Field-Effect Transistors;
TIM0910-15L by Toshiba

TIM0910-15L

Toshiba

The Toshiba TIM0910-15L is an N-channel RF Power FET with a 15V DS breakdown voltage, ideal for amplifier applications in X band. Featuring a ceramic-metal sealed co-fired package, it operates in depletion mode with 11.5A max drain current and 60W power dissipation at 175°C ambient temperature.
MRF374 by Freescale Semiconductor

MRF374

Freescale Semiconductor

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 270 W; Operating Mode: ENHANCEMENT MODE; Case Connection: SOURCE;
STAP57060 by STMicroelectronics

STAP57060

STMicroelectronics

STAP57060 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. Its compact flange mount design ensures efficient performance in demanding environments.
934065908112 by NXP Semiconductors

934065908112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Transistor Application: AMPLIFIER; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;