Infineon Technologies - PTMA080152MV1R500

  1. Home
  2. Infineon Technologies - PTMA080152MV1R500
PTMA080152MV1R500 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number PTMA080152MV1R500
Description WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 20; Package Body Material: PLASTIC/EPOXY; Characteristic Impedance: 50 ohm; Gain: 29 dB;
Datasheet PTMA080152MV1R500 Datasheet
In Stock21
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Construction: COMPONENT
Minimum Operating Frequency: 700 MHz
Mounting Feature: SURFACE MOUNT
No. of Functions: 1
Maximum Voltage Standing Wave Ratio: 10
No. of Terminals: 20
Maximum Input Power (CW): 15 dBm
Package Equivalence Code: SOP20,.56
Characteristic Impedance: 50 ohm
Maximum Operating Frequency: 1000 MHz
RF or Microwave Device Type: WIDE BAND HIGH POWER
Gain: 29 dB
Power Supplies (V): 28
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
21 - -

Popular Products

Category Top Products

HMC451LP3ETR by Hittite Microwave

HMC451LP3ETR

Hittite Microwave

WIDE BAND LOW POWER; Maximum Operating Temperature: 85 Cel; Minimum Operating Frequency: 5000 MHz; Gain: 12.5 dB; Construction: COMPONENT; Characteristic Impedance: 50 ohm;
HMC634LC4TR-R5 by Analog Devices

HMC634LC4TR-R5

Analog Devices

Analog Devices' HMC634LC4TR-R5 is a GAAS RF amplifier with 24 terminals, operating at -40 to 85°C. It requires a 5V power supply and features a surface-mount package for applications in RF and microwave systems.
ADL8121ACPZN-R7 by Analog Devices

ADL8121ACPZN-R7

Analog Devices

ADL8121ACPZN-R7 by Analog Devices is a PHEMT RF amplifier with 15dB gain, 32dBm CW input power, and 1.43 VSWR. Ideal for wideband low-power applications from 25MHz to 12GHz, it operates b/w -40°C to +85°C with a characteristic impedance of 50Ω. Suitable for surface mount installations with a 5V power supply requirement.
HMC797LP5ETR by Analog Devices

HMC797LP5ETR

Analog Devices

Analog Devices' HMC797LP5ETR is a GAAS technology RF amplifier with 32 terminals, operating b/w -55°C to 85°C. It has a power supply of 10V and max current of 440mA. Ideal for wide band medium power applications, it features a surface mount package body made of plastic/epoxy.
MAX2640AUT+T by Maxim Integrated

MAX2640AUT+T

Maxim Integrated

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Construction: COMPONENT;
SP9711 by Spectrum Control

SP9711

Spectrum Control

WIDE BAND LOW POWER; Maximum Voltage Standing Wave Ratio: 2; Minimum Operating Frequency: 1000 MHz; Characteristic Impedance: 50 ohm; Minimum Operating Temperature: -55 Cel; Maximum Operating Temperature: 85 Cel;
CMPA2560025F by Wolfspeed

CMPA2560025F

Wolfspeed

Wolfspeed's CMPA2560025F is a wide band high power RF amplifier module with 19.5 dB gain, operating from 2500 to 6000 MHz. It has a max VSWR of 5 and features a characteristic impedance of 50 ohm. Ideal for applications requiring high power amplification in the RF & Microwave domain.
SST12LP08-QXBE by Silicon Storage Technology

SST12LP08-QXBE

Silicon Storage Technology

NARROW BAND MEDIUM POWER; Maximum Input Power (CW): 5 dBm; Additional Features: HIGH RELIABILITY; Maximum Operating Frequency: 2484 MHz; Gain: 29 dB; Maximum Operating Temperature: 85 Cel;
TQP7M9102 by Triquint Semiconductor

TQP7M9102

Triquint Semiconductor

WIDE BAND MEDIUM POWER; Minimum Operating Frequency: 400 MHz; Minimum Operating Temperature: -40 Cel; Maximum Input Power (CW): 27 dBm; Maximum Operating Frequency: 4000 MHz; Construction: COMPONENT;
HMC505LP4E by Analog Devices

HMC505LP4E

Analog Devices

Analog Devices' HMC505LP4E is a RF amplifier with 50 ohm impedance, operating frequency range of 6800-7400 MHz, and VSWR of 2. Ideal for narrowband low-power applications in temperatures from -40 to 85°C. Package: PLASTIC/EPOXY, Technology: BIPOLAR, Mounting: SURFACE MOUNT.
SPF5043ZSR by Rf Micro Devices

SPF5043ZSR

Rf Micro Devices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Temperature: -40 Cel;
HMC478MP86TR by Hittite Microwave

HMC478MP86TR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Package Equivalence Code: SL,4GW-LD,.085CIR;
MMG3014NT1 by NXP Semiconductors

MMG3014NT1

NXP Semiconductors

MMG3014NT1 by NXP Semiconductors is a RF & Microwave Amplifier with 15 dBm CW input power, 18.5 dB gain, and 50 ohm impedance. It operates from 40 MHz to 4000 MHz, suitable for wide band medium power applications. This component has a plastic/epoxy package body material and requires a 5V power supply with max current of 160 mA.
HMC1121LP6GE by Analog Devices

HMC1121LP6GE

Analog Devices

Analog Devices' HMC1121LP6GE is a wide band high power RF amplifier with 25 dB gain and 24 dBm max input power. Operating from 5500 MHz to 8500 MHz, it is ideal for RF & microwave applications requiring components with a characteristic impedance of 50 ohms. With a temperature range of -40°C to 85°C, it offers reliable performance in various environments.
XL1000-BD-000V by Mimix Broadband

XL1000-BD-000V

Mimix Broadband

WIDE BAND LOW POWER; Gain: 12 dB; Terminal Finish: Matte Tin (Sn); Construction: COMPONENT; Maximum Operating Frequency: 40000 MHz; Additional Features: LOW NOISE;
HMC462 by Analog Devices

HMC462

Analog Devices

Analog Devices' HMC462 RF amplifier offers 12.5 dB gain, 18 dBm CW input power, and 1.25 max VSWR. Ideal for wideband low-power applications from 2-20 GHz, with PHEMT tech and surface mounting feature.
HMC751LC4TR by Hittite Microwave

HMC751LC4TR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Characteristic Impedance: 50 ohm;
QPA2611TR7 by Qorvo

QPA2611TR7

Qorvo

Qorvo's QPA2611TR7 is a GAN technology RF amplifier with 35.5 dB gain, operating from 8-12 GHz. It offers 21 dBm CW input power handling and VSWR of 3, suitable for wideband high-power applications in RF & microwave systems. The component has 24 terminals, surface-mountable on plastic/epoxy package body.
CMD244K5 by Qorvo

CMD244K5

Qorvo

WIDE BAND LOW POWER;
SMA3107-TL-E by Onsemi

SMA3107-TL-E

Onsemi

WIDE BAND LOW POWER; Terminal Finish: TIN BISMUTH; JESD-609 Code: e6;