Infineon Technologies - PTRA082808NFV1R5XUMA1

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Case Connection: SOURCE; Minimum Power Gain (Gp): 15 dB; Operating Mode: ENHANCEMENT MODE;

LET8180 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 18 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. Its robust design supports high power dissipation up to 289 W.

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;

PD85006-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 2 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This compact surface mount device ensures efficient performance with a max power dissipation of 36.5 W.

Mitsubishi Electric's MGF2430A-01 is an N-channel RF Power FET with a single configuration for amplifier applications. Operating in depletion mode, it offers a min power gain of 5.5 dB and can handle up to 0.8 A drain current at a max dissipation of 5 W. Ideal for Ku band frequencies, this transistor features a ceramic-metal-sealed co-fired package body and flat terminal form for surface mount applications.

PTVA101K02EV-V1-R0 by Wolfspeed is an N-CHANNEL RF Power FET with 105V DS Breakdown Voltage, 17dB Power Gain, and L BAND frequency. It is a COMMON SOURCE amplifier suitable for ENHANCEMENT MODE operation in applications requiring high power amplification in the L Band.

LET9120 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 18 A, breakdown voltage of 80 V, and operates in the L band. This surface-mount transistor excels in high-power scenarios with a dissipation of up to 200 W.

RF Power Field-Effect Transistors;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Operating Mode: ENHANCEMENT MODE;

DE375-501N21A by IXYS Corp is a plastic/epoxy N-channel RF Power FET with 500V DS breakdown voltage. It operates in the very high-frequency band and has a max drain current of 25A. Ideal for switching applications.

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Minimum DS Breakdown Voltage: 65 V; Package Shape: ROUND; Maximum Drain Current (Abs) (ID): .9 A;

STAC2942BW by STMicroelectronics is an N-CHANNEL RF Power FET with 40A max drain current and 625W max power dissipation. Ideal for high-power applications, it operates at up to 200°C, featuring metal-oxide semiconductor technology for efficient performance in single configuration setups.

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Reference Standard: IEC-60134; Operating Mode: ENHANCEMENT MODE; Maximum Drain-Source On Resistance: .3 ohm;

RF Power Field-Effect Transistors;

Sumitomo Electric Industries' EGNC210MK is an N-CHANNEL RF FET with 160V DS breakdown voltage. Ideal for ultra high frequency band applications, it features a gallium nitride element and operates in depletion mode. The package is ceramic-metal sealed co-fired, with a rectangular shape and flange mount style.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 294 W; Peak Reflow Temperature (C): 260; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

NE5550979A-T1-A by Renesas Electronics is a N-CHANNEL RF Power FET with 3A max drain current and 25W power dissipation. Ideal for high-frequency applications, it operates up to 150°C, making it suitable for various RF power amplification needs in surface-mount configurations.

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; JESD-30 Code: R-CDFM-F4; Terminal Position: DUAL; Package Shape: RECTANGULAR;

Toshiba's TIM3742-8UL is an N-channel RF Power FET with a 15V DS breakdown voltage, ideal for amplifier applications in the C band. Featuring a single configuration, it has a max drain current of 7A and operates in depletion mode. With a package style of flange mount and metal-oxide semiconductor technology, it offers high power dissipation up to 37.5W at a max temp of 175°C.