Infineon Technologies - PTVA043502ECP1

  1. Home
  2. Infineon Technologies - PTVA043502ECP1
PTVA043502ECP1 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number PTVA043502ECP1
Description N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; JESD-30 Code: R-CDFM-F4; Maximum Operating Temperature: 200 Cel; Package Style (Meter): FLANGE MOUNT;
Datasheet PTVA043502ECP1 Datasheet
In Stock943
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: COMMON SOURCE, 2 ELEMENTS
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 4
Minimum DS Breakdown Voltage: 115 V
Terminal Position: DUAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-CDFM-F4
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature: 200 Cel
Case Connection: SOURCE
Peak Reflow Temperature (C): NOT SPECIFIED
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
943 - -

Popular Products

Category Top Products

BF998R,215 by NXP Semiconductors

BF998R,215

NXP Semiconductors

NXP Semiconductors' BF998R,215 is an N-CHANNEL RF FET with a built-in diode for AMPLIFIER applications. Operating in DEPLETION MODE, it offers a 12V DS Breakdown Voltage and 0.03A Drain Current. With GULL WING terminals and ULTRA HIGH FREQUENCY capabilities, it's ideal for small outline designs in SOURCE connections.
BF992,215 by NXP Semiconductors

BF992,215

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Style (Meter): SMALL OUTLINE; Qualification: Not Qualified;
2SK161 by Toshiba

2SK161

Toshiba

Toshiba's 2SK161 is an N-CHANNEL RF FET with a DEPLETION MODE. Operating in the VERY HIGH FREQUENCY BAND, it has a power dissipation of 0.2 W and max temperature of 125 °C. Ideal for AMPLIFIER applications due to its SILICON element material and low feedback capacitance of 0.15 pF.
2N5951 by Onsemi

2N5951

Onsemi

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Elements: 1; Terminal Form: THROUGH-HOLE; Field Effect Transistor Technology: JUNCTION;
CLF1G0035-50,112 by NXP Semiconductors

CLF1G0035-50,112

NXP Semiconductors

N-CHANNEL; Maximum Operating Temperature: 250 Cel;
SMMBFJ310LT1 by Onsemi

SMMBFJ310LT1

Onsemi

SMMBFJ310LT1 by Onsemi is an N-CHANNEL RF FET with 25V DS Breakdown Voltage, ideal for AMPLIFIER applications. Operating in DEPLETION MODE, it offers ULTRA HIGH FREQUENCY performance with 2.5pF Crss feedback capacitance. This SMALL OUTLINE transistor features GULL WING terminals and SILICON element material.
2N4416 by Temic Semiconductors

2N4416

Temic Semiconductors

RF Small Signal Field-Effect Transistors; Configuration: SINGLE; Surface Mount: NO; Package Body Material: METAL; Transistor Element Material: SILICON; Transistor Application: AMPLIFIER;
BF545C-T by NXP Semiconductors

BF545C-T

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: JUNCTION; Package Shape: RECTANGULAR; Maximum Operating Temperature: 150 Cel;
NE3210S01 by Nec Electronics

NE3210S01

Nec Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: UNSPECIFIED; Minimum DS Breakdown Voltage: 3 V; Terminal Position: RADIAL;
ATF-54143-BLKG by Agilent Technologies

ATF-54143-BLKG

Agilent Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Package Shape: RECTANGULAR; Qualification: Not Qualified;
BF909AWR by NXP Semiconductors

BF909AWR

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Package Shape: RECTANGULAR; No. of Elements: 2; Maximum Operating Temperature: 150 Cel;
BF1212,215 by NXP Semiconductors

BF1212,215

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; No. of Elements: 1; Terminal Position: DUAL;
BF990AR-T by NXP Semiconductors

BF990AR-T

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .03 A; Transistor Application: AMPLIFIER; Minimum DS Breakdown Voltage: 18 V;
BF545C-TAPE-7 by NXP Semiconductors

BF545C-TAPE-7

NXP Semiconductors

BF545C-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a min DS breakdown voltage of 30V, operates in depletion mode, and supports very high frequency bands. This compact surface mount transistor ensures reliable performance up to 150 °C.
934063998115 by NXP Semiconductors

934063998115

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Transistor Application: SWITCHING; Additional Features: LOW NOISE; Minimum DS Breakdown Voltage: 6 V;
BLA8G1011LS-300 by NXP Semiconductors

BLA8G1011LS-300

NXP Semiconductors

RF Small Signal Field-Effect Transistors;
ATF-54143-BLKG by Broadcom

ATF-54143-BLKG

Broadcom

Broadcom ATF-54143-BLKG is a N-channel FET with 5V DS breakdown voltage, 15dB power gain, and operates in C band. Ideal for amplifier applications, it has a max drain current of 0.12A and can handle up to 0.725W power dissipation at 150°C.
MMBF4416A by Fairchild Semiconductor

MMBF4416A

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Package Shape: RECTANGULAR; Terminal Form: GULL WING;
BF904AWR by NXP Semiconductors

BF904AWR

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Package Shape: RECTANGULAR; Case Connection: SOURCE; Terminal Position: DUAL;
2N4416A by Thomson-csf Semiconductors

2N4416A

Thomson-csf Semiconductors

N-CHANNEL; Surface Mount: NO; Field Effect Transistor Technology: JUNCTION; Package Style (Meter): CYLINDRICAL; Package Shape: ROUND; Terminal Position: BOTTOM;