Infineon Technologies - PTVA043502FCV1R0XTMA1

  1. Home
  2. Infineon Technologies - PTVA043502FCV1R0XTMA1
PTVA043502FCV1R0XTMA1 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number PTVA043502FCV1R0XTMA1
Description RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
Datasheet PTVA043502FCV1R0XTMA1 Datasheet
In Stock705
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Peak Reflow Temperature (C): NOT SPECIFIED
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
705 - -

Popular Products

Category Top Products

PD84010-E by STMicroelectronics

PD84010-E

STMicroelectronics

PD84010-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 8 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This surface-mount transistor ensures efficient performance with a max power dissipation of 95 W.
BLF6G15LS-40RN by NXP Semiconductors

BLF6G15LS-40RN

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Moisture Sensitivity Level (MSL): NOT APPLICABLE;
A2T23H300-24SR6 by Freescale Semiconductor

A2T23H300-24SR6

Freescale Semiconductor

RF Power Field-Effect Transistors;
A3T21H455W23SR6 by NXP Semiconductors

A3T21H455W23SR6

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
BLF881S,112 by Ampleon Netherlands B V

BLF881S,112

Ampleon Netherlands B V

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 104 V; Peak Reflow Temperature (C): NOT SPECIFIED;
934056519135 by NXP Semiconductors

934056519135

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; JESD-30 Code: R-CDFM-F2; Maximum Drain Current (ID): 9 A;
PD57030S-E by STMicroelectronics

PD57030S-E

STMicroelectronics

PD57030S-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 4 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This compact device ensures efficient performance in demanding environments.
AFT09H310-03SR6 by Freescale Semiconductor

AFT09H310-03SR6

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Maximum Time At Peak Reflow Temperature (s): 40; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1; Peak Reflow Temperature (C): 260;
NE5550979A-A by Renesas Electronics

NE5550979A-A

Renesas Electronics

NE5550979A-A by Renesas Electronics is a N-CHANNEL RF Power FET with 3A max drain current and 25W max power dissipation. It operates at up to 150°C, suitable for high-power RF applications in surface-mount configurations.
A2V09H400-04SR3 by NXP Semiconductors

A2V09H400-04SR3

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
934065979118 by NXP Semiconductors

934065979118

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Form: FLAT; No. of Terminals: 4; Minimum DS Breakdown Voltage: 65 V;
PTVA101K02EVV1R0XTMA1 by Wolfspeed

PTVA101K02EVV1R0XTMA1

Wolfspeed

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; Transistor Element Material: SILICON; Peak Reflow Temperature (C): NOT SPECIFIED;
TGF2023-2-02 by Triquint Semiconductor

TGF2023-2-02

Triquint Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): UNCASED CHIP; Package Shape: RECTANGULAR; JESD-30 Code: R-XUUC-N3;
MRF1517NT1 by Freescale Semiconductor

MRF1517NT1

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 62.5 W; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 3;
BLF175 by New Jersey Semiconductor Products

BLF175

New Jersey Semiconductor Products

N-CHANNEL; Configuration: SINGLE; Minimum DS Breakdown Voltage: 125 V; Transistor Element Material: SILICON; Operating Mode: ENHANCEMENT MODE; Highest Frequency Band: VERY HIGH FREQUENCY BAND;
SD56120 by STMicroelectronics

SD56120

STMicroelectronics

SD56120 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications, featuring a max drain current of 14 A and a breakdown voltage of 65 V. It operates in enhancement mode within the ultra-high frequency band. This surface-mount device offers high power dissipation up to 217 W, ideal for demanding RF applications.
TIM5964-60SL by Toshiba

TIM5964-60SL

Toshiba

The Toshiba TIM5964-60SL is an N-channel RF Power FET with a max drain current of 31A, ideal for amplifier applications in the C band. Featuring a ceramic-metal-sealed co-fired package, it operates in enhancement mode with a max power dissipation of 125W at 175°C.
PD55015STR-E by STMicroelectronics

PD55015STR-E

STMicroelectronics

STMicroelectronics' PD55015STR-E is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage and 7A Drain Current. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features a PLASTIC/EPOXY package, SINGLE configuration, and operates in ENHANCEMENT MODE.
AFT09S220-02NR3 by NXP Semiconductors

AFT09S220-02NR3

NXP Semiconductors

RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260; Terminal Finish: Tin (Sn); JESD-609 Code: e3;
PTFA080551EV4R250XTMA1 by Wolfspeed

PTFA080551EV4R250XTMA1

Wolfspeed

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: S-CDFM-F2; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;