Infineon Technologies - PTVA093002TCV1R250XUMA1

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PTVA093002TCV1R250XUMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number PTVA093002TCV1R250XUMA1
Description N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Minimum DS Breakdown Voltage: 105 V; Terminal Form: GULL WING; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet PTVA093002TCV1R250XUMA1 Datasheet
In Stock50
NAME DESCRIPTION
Minimum Power Gain (Gp): 17.5 dB
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: COMMON SOURCE, 2 ELEMENTS
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 4
Minimum DS Breakdown Voltage: 105 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-CDSO-G4
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature: 200 Cel
Case Connection: SOURCE
Peak Reflow Temperature (C): NOT SPECIFIED
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