Infineon Technologies - Q67000-S245

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Q67000-S245 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number Q67000-S245
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 10 ohm; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY;
Datasheet Q67000-S245 Datasheet
In Stock921
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Feedback Capacitance (Crss): 6 pF
Maximum Drain Current (ID): .17 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 3
Minimum DS Breakdown Voltage: 100 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: 10 ohm
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