Infineon Technologies - Q67041-A4672-A003

  1. Home
  2. Infineon Technologies - Q67041-A4672-A003
Q67041-A4672-A003 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number Q67041-A4672-A003
Description N-Channel; Nominal Turn Off Time (toff): 382 ns; Maximum Operating Temperature: 150 Cel; Transistor Element Material: SILICON; Nominal Turn On Time (ton): 49 ns; Maximum Gate-Emitter Voltage: 20 V;
Datasheet Q67041-A4672-A003 Datasheet
In Stock909
NAME DESCRIPTION
Nominal Turn Off Time (toff): 382 ns
Maximum Collector-Emitter Voltage: 600 V
Nominal Turn On Time (ton): 49 ns
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 5 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Polarity or Channel Type: N-Channel
Maximum VCEsat: 2.5 V
Minimum Operating Temperature: -55 Cel
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
909 - -

Popular Products

Category Top Products

IRG4PC40UD-E by Infineon Technologies

IRG4PC40UD-E

Infineon Technologies

IRG4PC40UD-E by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 40A max collector current. It has a single configuration with built-in diode, ideal for power control applications. Featuring a turn-off time of 330ns and turn-on time of 92ns, this transistor is designed for flange mount installation.
SK15DGDL126ET by Semikron International

SK15DGDL126ET

Semikron International

SK15DGDL126ET by Semikron International is an N-CHANNEL IGBT with 1200V VCEsat, 22A IC, and 475ns toff. Ideal for POWER CONTROL applications due to its complex configuration and SILICON material. Package style is FLANGE MOUNT with 23 terminals and operates up to 150°C.
FS50R12KE3 by Infineon Technologies

FS50R12KE3

Infineon Technologies

Infineon Technologies' FS50R12KE3 is a N-CHANNEL IGBT with 6 elements, VCEsat of 2.2V, and IC of 75A. Ideal for high-power applications like motor drives and renewable energy systems due to its max VCE of 1200V and power dissipation of 270W. Features built-in diode, thermistor, and fast turn-off time (toff) of 610ns for efficient performance.
FS25R12W1T4BOMA1 by Infineon Technologies

FS25R12W1T4BOMA1

Infineon Technologies

FS25R12W1T4BOMA1 by Infineon Technologies is an N-CHANNEL IGBT with 6 elements in a bridge configuration. It has a max collector-emitter voltage of 1200V and a nominal turn off time of 505ns, making it ideal for power control applications. With a max collector current of 45A and operating temperature of up to 175°C, this IGBT is designed for high-power industrial systems.
IRG4BC30U-SPBF by International Rectifier

IRG4BC30U-SPBF

International Rectifier

IRG4BC30U-SPBF by International Rectifier is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage and 23A max collector current. It has a power dissipation of 100W, turn-off time of 320ns, and operates at up to 150°C. Ideal for power control applications requiring fast switching speeds in surface-mount configurations.
IRG4BC30KDPBF by International Rectifier

IRG4BC30KDPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 28 A; Package Style (Meter): FLANGE MOUNT;
FS150R12KT4BOSA1 by Infineon Technologies

FS150R12KT4BOSA1

Infineon Technologies

FS150R12KT4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 6 elements in a bridge configuration. It has a max VCEsat of 2.1V and can handle a collector current of 150A, making it suitable for high-power applications like motor drives and inverters. With a max operating temperature of 150°C and isolated case connection, it ensures reliable performance in demanding environments.
IRG7PH42UD2PBF by International Rectifier

IRG7PH42UD2PBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 321 W; Maximum Collector Current (IC): 60 A; Maximum Operating Temperature: 175 Cel;
IKW25N120H3XK by Infineon Technologies

IKW25N120H3XK

Infineon Technologies

IKW25N120H3XK by Infineon Technologies is an N-CHANNEL IGBT with a max voltage of 1200V and current of 50A. It has a turn-off time of 397ns and turn-on time of 61ns, making it ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals and operates at temperatures up to 175°C.
IRGB20B60PD1PBF by Infineon Technologies

IRGB20B60PD1PBF

Infineon Technologies

IRGB20B60PD1PBF by Infineon Technologies is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 40A max collector current, and 215W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast rise time of 8ns. Suitable for use in high-power systems requiring efficient switching capabilities.
NGTB15N120FLWG by Onsemi

NGTB15N120FLWG

Onsemi

NGTB15N120FLWG by Onsemi is an N-CHANNEL IGBT with 156W power dissipation, 1200V collector-emitter voltage, and 30A collector current. Ideal for high-power applications requiring efficient switching capabilities at up to 150°C operating temperature.
SK20DGDL065ET by Semikron International

SK20DGDL065ET

Semikron International

SK20DGDL065ET by Semikron International is an N-CHANNEL IGBT with 600V VCEsat, 24A IC, and 190ns toff. Ideal for POWER CONTROL applications due to its complex configuration and SILICON material. Package style is FLANGE MOUNT with 23 terminals and operates up to 150°C.
FB10R06KL4GB1 by Infineon Technologies

FB10R06KL4GB1

Infineon Technologies

Infineon's FB10R06KL4GB1 is an N-CHANNEL IGBT with VCEsat of 2.55V, IC of 15A, and Pmax of 55W. Ideal for applications requiring high power dissipation in complex configurations at up to 150°C operating temperature.
IRG4BC40UPBF by International Rectifier

IRG4BC40UPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 160 W; Maximum Collector Current (IC): 40 A; No. of Elements: 1;
NGTB60N65FL2WG by Onsemi

NGTB60N65FL2WG

Onsemi

NGTB60N65FL2WG by Onsemi is an N-CHANNEL IGBT with 650V VCEsat, 100A IC, and 595W power dissipation. Ideal for power control applications, it features a built-in diode and operates b/w -55 to 175 °C. The transistor has a turn-off time of 278ns and turn-on time of 168ns in a rectangular package with through-hole terminals.
2PS18012E44G40113NOSA1 by Infineon Technologies

2PS18012E44G40113NOSA1

Infineon Technologies

2PS18012E44G40113NOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1200V max collector-emitter voltage. Ideal for power control applications, it operates b/w -25°C to 60°C. Featuring a complex configuration and isolated case connection, this microelectronic assembly contains 8 elements made of silicon.
STGB30M65DF2 by STMicroelectronics

STGB30M65DF2

STMicroelectronics

STGB30M65DF2 by STMicroelectronics is an N-CHANNEL IGBT with 650V VCE, 60A IC, and 2V VCEsat. Ideal for POWER CONTROL applications due to its built-in diode, low turn-off time of 310ns, and high power dissipation of 258W. Suitable for surface mount with gull wing terminals in a small outline package.
FZ400R12KE4HOSA1 by Infineon Technologies

FZ400R12KE4HOSA1

Infineon Technologies

FZ400R12KE4HOSA1 by Infineon is an N-CHANNEL IGBT with 1200V max collector-emitter voltage. It has a single configuration with built-in diode, ideal for power control applications. Featuring 810ns turn off time and 370ns turn on time, it operates at up to 150°C temperature in a rectangular package style.
IKW40N120H3 by Infineon Technologies

IKW40N120H3

Infineon Technologies

IKW40N120H3 by Infineon Technologies is an N-CHANNEL IGBT with 1200V VCE, 80A IC, and 483W Ptot. It features a built-in diode for power control applications. With a turn-off time of 414ns and turn-on time of 78ns, it operates at up to 175°C temperature.
STGW20NC60VD by STMicroelectronics

STGW20NC60VD

STMicroelectronics

STGW20NC60VD by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 60A max collector current, and 200W max power dissipation. Ideal for power control applications, it features a single configuration with built-in diode and a nominal turn-off time of 280ns.