S25FL256SDPBHI203 by Infineon Technologies | Memory ICs

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	S25FL256SDPBHI203
Description	FLASH; Temperature Grade: INDUSTRIAL; Package Code: TBGA; Maximum Clock Frequency (fCLK): 133 MHz; Terminal Pitch: 1 mm; Memory Width: 1;
Datasheet	S25FL256SDPBHI203 Datasheet
In Stock	420

NAME	DESCRIPTION
Memory Density:	268435456 bit
Organization:	256MX1
Maximum Seated Height:	1.2 mm
Programming Voltage (V):	3
Minimum Supply Voltage (Vsup):	2.7 V
Memory IC Type:	FLASH
Minimum Operating Temperature:	-40 Cel
Memory Width:	1
No. of Functions:	1
Maximum Clock Frequency (fCLK):	133 MHz
Type:	NOR TYPE
No. of Words:	268435456 words
Length:	8 mm
Technology:	CMOS
No. of Words Code:	256M
Operating Mode:	SYNCHRONOUS
Nominal Supply Voltage / Vsup (V):	3
Maximum Operating Temperature:	85 Cel
Parallel or Serial:	SERIAL
Package Code:	TBGA
Width:	6 mm
Terminal Pitch:	1 mm
Temperature Grade:	INDUSTRIAL
Maximum Supply Voltage (Vsup):	3.6 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
420	-	-

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 2; No. of Terminals: 6; Minimum DS Breakdown Voltage: 60 V;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

MURS160T3G by Onsemi is a single rectifier diode with a max output current of 2A and max repetitive peak reverse voltage of 600V. It has a fast recovery time of 0.075us, making it suitable for high voltage applications. The diode operates in temperatures ranging from -65 to 175°C, ideal for power systems requiring ultra-fast response.

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Time At Peak Reflow Temperature (s): 30; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: THROUGH HOLE MOUNT; No. of Terminals: 3; Package Shape or Style: RECTANGULAR; Maximum Operating Current: 1.5 mA; Package Equivalence Code: SIP3,.1,50;

1N4148WT-7 by Diodes Inc. is a fast recovery rectifier diode with a max reverse recovery time of 0.004 us and a max forward voltage of 1.25 V. It has a package style of small outline, making it suitable for surface mount applications where high-speed switching is required at temperatures ranging from -65 to 150 °C.

MMBT2222ALT1G by Onsemi is a NPN BJT transistor with 3 terminals, max power dissipation of 0.3W, and hFE of 75. Ideal for switching applications, it operates b/w -55 to 150 °C with a max collector-emitter voltage of 40V. This surface-mount device has a transition frequency of 300MHz and turn-on time of 35ns.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;