S29AS008J70BFI033 by Infineon Technologies | Memory ICs

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	S29AS008J70BFI033
Description	FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.65 V;
Datasheet	S29AS008J70BFI033 Datasheet
In Stock	106

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Standby Current:	.00003 Amp
Organization:	512KX16
Maximum Seated Height:	.8 mm
Programming Voltage (V):	1.8
Minimum Supply Voltage (Vsup):	1.65 V
Sub-Category:	Flash Memories
Surface Mount:	YES
Maximum Supply Current:	30 mA
Command User Interface:	YES
No. of Terminals:	48
No. of Words:	524288 words
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY, VERY THIN PROFILE
Technology:	CMOS
JESD-30 Code:	R-PBGA-B48
No. of Sectors/Size:	8,15
Package Shape:	RECTANGULAR
Terminal Form:	BALL
Operating Mode:	ASYNCHRONOUS
Maximum Operating Temperature:	85 Cel
Package Code:	VFBGA
Width:	6.15 mm
Boot Block:	TOP
Memory Density:	8388608 bit
Sector Size (Words):	8K,64K
Toggle Bit:	YES
Memory IC Type:	FLASH
Minimum Operating Temperature:	-40 Cel
Memory Width:	16
No. of Functions:	1
Type:	NOR TYPE
Qualification:	Not Qualified
Package Equivalence Code:	BGA48,6X8,32
Alternate Memory Width:	8
Common Flash Interface:	YES
Length:	8.15 mm
Maximum Access Time:	70 ns
No. of Words Code:	512K
Nominal Supply Voltage / Vsup (V):	1.8
Ready or Busy:	YES
Parallel or Serial:	PARALLEL
Terminal Pitch:	.8 mm
Temperature Grade:	INDUSTRIAL
Maximum Supply Voltage (Vsup):	1.95 V
Data Polling:	YES
Power Supplies (V):	1.8

Pricing (USD)

Qty.	Unit Price	Ext. Price
106	-	-

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FDN5618P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage. It features a single configuration with built-in diode, suitable for switching applications. With 10A IDM and 0.17 ohm RDS(on), it operates in the temperature range of -55 to 150 °C, making it ideal for various electronic devices.