Infineon Technologies - S29GL512T10FHB020

  1. Home
  2. Infineon Technologies - S29GL512T10FHB020
S29GL512T10FHB020 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number S29GL512T10FHB020
Description FLASH;
Datasheet S29GL512T10FHB020 Datasheet
In Stock940
NAME DESCRIPTION
Memory IC Type: FLASH
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
940 - -

Popular Products

Category Top Products

S25FS128SDSNFI100 by Infineon Technologies

S25FS128SDSNFI100

Infineon Technologies

Infineon's S25FS128SDSNFI100 is a 16MX8 NOR flash memory with 133 MHz clock frequency, SPI serial bus type, and 100000 write/erase cycles. It operates at -40 to 85 °C, has a supply voltage of 1.7-2V, and is ideal for industrial applications requiring high endurance and fast data transfer.
AT45DB081E-SSHN-B by Adesto Technologies

AT45DB081E-SSHN-B

Adesto Technologies

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;
S25FL256SAGMFI011 by Cypress Semiconductor

S25FL256SAGMFI011

Cypress Semiconductor

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Memory Density: 268435456 bit;
MT29F2G01ABAGDWB-IT:GTR by Micron Technology

MT29F2G01ABAGDWB-IT:GTR

Micron Technology

FLASH; Programming Voltage (V): 3.3; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; Type: SLC NAND TYPE;
MT25QU256ABA8E12-1SIT/TR by Micron Technology

MT25QU256ABA8E12-1SIT/TR

Micron Technology

FLASH; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Programming Voltage (V): 1.8;
AT45DB161E-SHD-T by Dialog Semiconductor

AT45DB161E-SHD-T

Dialog Semiconductor

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Terminal Finish: NICKEL PALLADIUM GOLD;
AT25SF041B-SSHD-T by Renesas Electronics

AT25SF041B-SSHD-T

Renesas Electronics

AT25SF041B-SSHD-T by Renesas Electronics is a 4Mx1 NOR flash memory with 108MHz clock frequency, SPI serial bus type. It operates at -40 to 85°C, has 100K write/erase cycles endurance, and is suitable for industrial applications requiring high-speed data storage in compact devices.
AT25XE041B-MAHN-T by Dialog Semiconductor

AT25XE041B-MAHN-T

Dialog Semiconductor

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: HVSON; Package Shape: RECTANGULAR; Package Style (Meter): SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE;
MTFC4GACAJCN-4MIT by Micron Technology

MTFC4GACAJCN-4MIT

Micron Technology

MTFC4GACAJCN-4MIT by Micron Technology is a 4GX8 MLC NAND flash memory with 34359738368 bit density. Operating at -40 to 85 °C, it has a clock frequency of 52 MHz and supports parallel interface. Ideal for industrial applications requiring high-speed data storage in compact devices.
MT29F4G08ABADAH4-IT:D by Micron Technology

MT29F4G08ABADAH4-IT:D

Micron Technology

Micron Technology's MT29F4G08ABADAH4-IT:D is a 512MX8 SLC NAND flash memory with 3.3V supply, operating at -40 to 85°C. It features a 2K word page size, 128K word sector size, and parallel interface. Ideal for industrial applications requiring fast access times and low standby current.
AT45DB641E-MWHN-T by Dialog Semiconductor

AT45DB641E-MWHN-T

Dialog Semiconductor

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: HVSON; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 3.6 V;
S25FL128SAGMFIR00 by Cypress Semiconductor

S25FL128SAGMFIR00

Cypress Semiconductor

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; JESD-609 Code: e3;
S25FL512SAGMFI010 by Cypress Semiconductor

S25FL512SAGMFI010

Cypress Semiconductor

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; No. of Words: 64094208 words;
AT45DB641E-MHN-Y by Renesas Electronics

AT45DB641E-MHN-Y

Renesas Electronics

Renesas Electronics AT45DB641E-MHN-Y is a 64Mbit Flash Memory with 85MHz clock frequency, operating from -40 to 85°C. It features a serial interface, 1.8V programming voltage, and small outline package. Ideal for industrial applications requiring high-speed data storage in compact form factors.
N25Q256A13EF840E by Micron Technology

N25Q256A13EF840E

Micron Technology

Micron Technology's N25Q256A13EF840E is a NOR type Flash Memory with 256Mx1 organization, operating in synchronous mode at up to 108MHz clock frequency. Ideal for industrial applications, it offers a memory density of 268435456 bits and supports SPI serial bus communication.
M29W160ET70N6E by STMicroelectronics

M29W160ET70N6E

STMicroelectronics

STMicroelectronics M29W160ET70N6E is a 1MX16 NOR Flash Memory with 3V supply, operating at -40 to 85°C. It features asynchronous mode, 70ns access time, and 16Mbit memory density. Ideal for industrial applications requiring fast data access and reliable non-volatile storage.
AT25SF041-SSHD-T by Adesto Technologies

AT25SF041-SSHD-T

Adesto Technologies

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Moisture Sensitivity Level (MSL): 1;
JS28F128P33TF70A by Micron Technology

JS28F128P33TF70A

Micron Technology

Micron Technology's JS28F128P33TF70A is a NOR flash memory with 8MX16 organization, 8388608 words capacity, and 16K/64K sector size. Operating at -40 to 85 °C, it has a programming voltage of 3V and max access time of 70ns. Ideal for industrial applications requiring high-density memory with fast access speeds.
AT25DF081A-SSH-B by Dialog Semiconductor

AT25DF081A-SSH-B

Dialog Semiconductor

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Maximum Standby Current: .00001 Amp;
W25Q64JVSSIQ by Winbond Electronics

W25Q64JVSSIQ

Winbond Electronics

W25Q64JVSSIQ by Winbond Electronics is a NOR type flash memory with 8Mx8 organization, SPI serial bus type, and 133MHz clock frequency. It operates at 3.3V with 100000 write/erase cycles endurance. Ideal for industrial applications requiring high-speed data storage in compact devices.