SAB80C515-N-T40/110 by Infineon Technologies | Peripheral ICs

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	SAB80C515-N-T40/110
Description	MICROCONTROLLER; Temperature Grade: INDUSTRIAL; Terminal Form: J BEND; No. of Terminals: 68; Package Code: QCCJ; Package Shape: SQUARE;
Datasheet	SAB80C515-N-T40/110 Datasheet
In Stock	209

NAME	DESCRIPTION
Minimum Supply Voltage:	4.5 V
Package Body Material:	PLASTIC/EPOXY
Nominal Supply Voltage:	5 V
Maximum Seated Height:	5.08 mm
Sub-Category:	Microcontrollers
Surface Mount:	YES
Maximum Supply Current:	35 mA
Terminal Finish:	Tin/Lead (Sn/Pb)
ADC Channels:	YES
No. of Terminals:	68
DMA Channels:	NO
Terminal Position:	QUAD
Package Style (Meter):	CHIP CARRIER
No. of I/O Lines:	56
Address Bus Width:	16
Technology:	CMOS
JESD-30 Code:	S-PQCC-J68
Maximum Clock Frequency:	12 MHz
Package Shape:	SQUARE
ROM Words:	8192
Terminal Form:	J BEND
Maximum Operating Temperature:	110 Cel
Package Code:	QCCJ
Width:	24.21 mm
Speed:	12 rpm
Peripheral IC Type:	MICROCONTROLLER
Maximum Supply Voltage:	5.5 V
RAM Bytes:	256
External Data Bus Width:	8
Bit Size:	8
DAC Channels:	NO
JESD-609 Code:	e0
Minimum Operating Temperature:	-40 Cel
Qualification:	Not Qualified
Package Equivalence Code:	LDCC68,1.0SQ
Length:	24.21 mm
PWM Channels:	NO
Additional Features:	BOOLEAN PROCESSOR
ROM Programmability:	MROM
Terminal Pitch:	1.27 mm
Temperature Grade:	INDUSTRIAL
Power Supplies (V):	5
CPU Family:	8051

Pricing (USD)

Qty.	Unit Price	Ext. Price
209	-	-

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RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

MMBT3906LT1G by Onsemi is a PNP BJT with VCEsat of 0.4V, hFE of 30, and fT of 250MHz. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency, and compact SOT-23 package. Suitable for use in temperature-sensitive environments with an operating range from -65°C to 150°C.

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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Drain Current (ID): .115 A; Maximum Drain-Source On Resistance: 7.5 ohm;