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Manufacturer | Infineon Technologies |
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Manufacturer's Part Number | SEMD4 |
Description | NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Collector Current (IC): .1 A; Package Style (Meter): SMALL OUTLINE; |
Datasheet | SEMD4 Datasheet |
In Stock | 304 |
NAME | DESCRIPTION |
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Nominal Transition Frequency (fT): | 130 MHz |
Package Body Material: | PLASTIC/EPOXY |
Maximum Collector Current (IC): | .1 A |
Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
Transistor Element Material: | SILICON |
Transistor Application: | SWITCHING |
Polarity or Channel Type: | NPN AND PNP |
Surface Mount: | YES |
Minimum DC Current Gain (hFE): | 120 |
Terminal Finish: | MATTE TIN |
JESD-609 Code: | e3 |
No. of Terminals: | 6 |
Qualification: | Not Qualified |
Maximum Collector-Emitter Voltage: | 50 V |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-F6 |
No. of Elements: | 2 |
Package Shape: | RECTANGULAR |
Terminal Form: | FLAT |
Additional Features: | BUILT-IN BIAS RESISTOR RATIO IS 1 |
Maximum Operating Temperature: | 150 Cel |