Infineon Technologies - SFH488425

  1. Home
  2. Infineon Technologies - SFH488425
SFH488425 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number SFH488425
Description LASER DIODE; Peak Wavelength (nm): 850; Size: 4.95 mm; Configuration: SINGLE; Shape: ROUND; Maximum Operating Temperature: 85 Cel;
Datasheet SFH488425 Datasheet
In Stock867
NAME DESCRIPTION
No. of Functions: 1
Optoelectronic Type: LASER DIODE
Shape: ROUND
Configuration: SINGLE
Size: 4.95 mm
Peak Wavelength (nm): 850
Maximum Operating Temperature: 85 Cel
Minimum Operating Temperature: -20 Cel
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
867 - -

Popular Products

Category Top Products

NX8570SC437-BA-AZ by Renesas Electronics

NX8570SC437-BA-AZ

Renesas Electronics

LASER DIODE; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1543; Minimum Operating Temperature: -5 Cel; Maximum Forward Voltage: 2.5 V; Maximum Forward Current: .3 A;
STH91005A by Infineon Technologies

STH91005A

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 1.5 V; Peak Wavelength (nm): 1550; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .12 A;
DL-6140-201 by Onsemi

DL-6140-201

Onsemi

DL-6140-201 by Onsemi is a Laser Diode with 785nm Peak Wavelength, 0.12A Max Forward Current, and -10 to 50 °C Operating Temp. Ideal for applications requiring THROUGH HOLE MOUNT optoelectronics in various industries.
TOLD320ABC by Toshiba

TOLD320ABC

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Forward Current: .15 A; Semiconductor Material: InGaAs; Maximum Operating Temperature: 70 Cel;
NX8567SA441-CC by Renesas Electronics

NX8567SA441-CC

Renesas Electronics

LASER DIODE; Maximum Response Time: .000000000125 s; Maximum Forward Current: .15 A; Peak Wavelength (nm): 1544; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -5 Cel;
NX8571SC618D-BA by Renesas Electronics

NX8571SC618D-BA

Renesas Electronics

LASER DIODE; Maximum Forward Voltage: 2.5 V; Maximum Forward Current: .3 A; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -5 Cel; Peak Wavelength (nm): 1561;
DL-3038-023 by Onsemi

DL-3038-023

Onsemi

DL-3038-023 by Onsemi is a 640nm LASER DIODE with AlGaInP material. It operates b/w -10 °C to 40°C, featuring THROUGH HOLE MOUNT. Ideal for applications requiring precise laser emission in optoelectronics and telecommunications.
STL81004A by Infineon Technologies

STL81004A

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Spectral Bandwidth: 5 m; Peak Wavelength (nm): 1330; Maximum Forward Current: .12 A; Maximum Operating Temperature: 85 Cel;
SPLBS79 by Infineon Technologies

SPLBS79

Infineon Technologies

LASER DIODE;
STL81004H by Infineon Technologies

STL81004H

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .12 A; Peak Wavelength (nm): 1330; Maximum Forward Voltage: 1.5 V; Maximum Operating Temperature: 85 Cel;
NX8567SAS489-BC by Renesas Electronics

NX8567SAS489-BC

Renesas Electronics

LASER DIODE; Maximum Response Time: .000000000125 s; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -5 Cel; Peak Wavelength (nm): 1548; Maximum Forward Current: .15 A;
TOLD138 by Toshiba

TOLD138

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Forward Current: .105 A; Maximum Operating Temperature: 50 Cel; Peak Wavelength (nm): 830;
CQF25C/D12 by NXP Semiconductors

CQF25C/D12

NXP Semiconductors

CQF25C/D12 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 875 nm and a max forward current of 0.15 A. It operates b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for precision tasks.
NX8571SA654-BA by Renesas Electronics

NX8571SA654-BA

Renesas Electronics

LASER DIODE; Peak Wavelength (nm): 1565; Maximum Forward Current: .01 A; Semiconductor Material: InGaAsP; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -20 Cel;
SDL4030 by Onsemi

SDL4030

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Semiconductor Material: GaAlAs; JESD-609 Code: e0; Peak Wavelength (nm): 790;
NX8565LE6031-CC by Renesas Electronics

NX8565LE6031-CC

Renesas Electronics

LASER DIODE; Mounting Feature: SURFACE MOUNT; Semiconductor Material: GaAs; Peak Wavelength (nm): 1600; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 2 V;
NX8570SC6053D-BA-AZ by Renesas Electronics

NX8570SC6053D-BA-AZ

Renesas Electronics

LASER DIODE; Minimum Operating Temperature: -5 Cel; Maximum Forward Current: .3 A; Semiconductor Material: InGaAsP; Maximum Forward Voltage: 2.5 V; Maximum Operating Temperature: 70 Cel;
TOLD173 by Toshiba

TOLD173

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .115 A; Maximum Operating Temperature: 50 Cel; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 830;
DL-4038-021 by Onsemi

DL-4038-021

Onsemi

DL-4038-021 by Onsemi is a 645nm LASER DIODE with AlGaInP material. It operates b/w -10 °C to 40°C, featuring THROUGH HOLE MOUNT. Ideal for applications requiring precise laser emission in optoelectronics and telecommunications.
NX8570SC513-BA-A by Renesas Electronics

NX8570SC513-BA-A

Renesas Electronics

LASER DIODE; Maximum Forward Voltage: 2.5 V; Maximum Forward Current: .3 A; Semiconductor Material: InGaAsP; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1551;