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Manufacturer | Infineon Technologies |
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Manufacturer's Part Number | SIPC42S2N08 |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 75 V; No. of Elements: 1; |
Datasheet | SIPC42S2N08 Datasheet |
In Stock | 690 |
NAME | DESCRIPTION |
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Package Body Material: | UNSPECIFIED |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum Drain Current (ID): | 227 A |
Sub-Category: | FET General Purpose Power |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
Terminal Finish: | MATTE TIN |
JESD-609 Code: | e3 |
No. of Terminals: | 5 |
Minimum DS Breakdown Voltage: | 75 V |
Qualification: | Not Qualified |
Terminal Position: | UPPER |
Package Style (Meter): | UNCASED CHIP |
JESD-30 Code: | R-XUUC-N5 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | NO LEAD |
Operating Mode: | ENHANCEMENT MODE |
Additional Features: | AVALANCHE RATED |
Maximum Operating Temperature: | 175 Cel |
Maximum Drain Current (Abs) (ID): | 227 A |
Maximum Drain-Source On Resistance: | .0042 ohm |