Infineon Technologies - SIPC42S2N08

SIPC42S2N08 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number SIPC42S2N08
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 75 V; No. of Elements: 1;
Datasheet SIPC42S2N08 Datasheet
In Stock690
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 227 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: MATTE TIN
JESD-609 Code: e3
No. of Terminals: 5
Minimum DS Breakdown Voltage: 75 V
Qualification: Not Qualified
Terminal Position: UPPER
Package Style (Meter): UNCASED CHIP
JESD-30 Code: R-XUUC-N5
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Additional Features: AVALANCHE RATED
Maximum Operating Temperature: 175 Cel
Maximum Drain Current (Abs) (ID): 227 A
Maximum Drain-Source On Resistance: .0042 ohm
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Pricing (USD)

Qty. Unit Price Ext. Price
690 - -

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