Infineon Technologies - SISC0.6N25D

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SISC0.6N25D by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number SISC0.6N25D
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain-Source On Resistance: 100 ohm; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 250 V;
Datasheet SISC0.6N25D Datasheet
In Stock936
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 2
Minimum DS Breakdown Voltage: 250 V
Qualification: Not Qualified
Terminal Position: UPPER
Package Style (Meter): UNCASED CHIP
JESD-30 Code: R-XUUC-N2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: DEPLETION MODE
Maximum Drain-Source On Resistance: 100 ohm
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Pricing (USD)

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