Infineon Technologies - SMBTA06E6433HTMA1

  1. Home
  2. Infineon Technologies - SMBTA06E6433HTMA1
SMBTA06E6433HTMA1 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number SMBTA06E6433HTMA1
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Maximum Collector-Emitter Voltage: 80 V;
Datasheet SMBTA06E6433HTMA1 Datasheet
In Stock72,332
NAME DESCRIPTION
Nominal Transition Frequency (fT): 100 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .5 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 100
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 80 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Peak Reflow Temperature (C): NOT SPECIFIED
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
72,332 - -

Popular Products

Category Top Products

2N3906 by Vishay Intertechnology

2N3906

Vishay Intertechnology

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .2 A;
2N2222A by Continental Device India

2N2222A

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
MMBT2907A by Kodenshi Auk

MMBT2907A

Kodenshi Auk

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Terminal Position: DUAL;
2N3906 by International Devices

2N3906

International Devices

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
MMBT2222A by Changzhou Galaxy Century Microelectronics

MMBT2222A

Changzhou Galaxy Century Microelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; Peak Reflow Temperature (C): NOT SPECIFIED;
JANTX2N2222AUBT/R by Microchip Technology

JANTX2N2222AUBT/R

Microchip Technology

JANTX2N2222AUBT/R by Microchip is a NPN BJT transistor for switching applications. It has hFE of 30, Vce of 50V, and Ic of 0.8A. With a turn on time of 35ns and turn off time of 300ns, it's ideal for fast-switching circuits in military-grade electronics per MIL-19500/255 standards.
2N6517BU by Fairchild Semiconductor

2N6517BU

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 40 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;
MMBT3906 by Onsemi

MMBT3906

Onsemi

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .2 A;
BC847C by Weitronic Enterprise

BC847C

Weitronic Enterprise

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BC556BTF by Onsemi

BC556BTF

Onsemi

BC556BTF by Onsemi is a PNP BJT transistor with a max collector-emitter voltage of 65V and max current of 0.1A. With a min DC current gain of 200, it's ideal for switching applications at up to 150°C operating temperature in through-hole packages.
2N2219A by Crimson Semiconductor

2N2219A

Crimson Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
BC847BVN-7 by Diodes Incorporated

BC847BVN-7

Diodes Incorporated

BC847BVN-7 by Diodes Inc. is a small signal BJT with NPN and PNP polarity, featuring separate 2-element configuration. With a max power dissipation of 0.15W, it operates at up to 150°C and has a max collector-emitter voltage of 45V. Ideal for applications requiring high DC current gain and transition frequency up to 300MHz in compact designs.
2N3904 by Jiangsu Changjiang Electronics Technology

2N3904

Jiangsu Changjiang Electronics Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .2 A;
MMBT3904 by Zowie Technology

MMBT3904

Zowie Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .2 A;
PMBT2369,215 by NXP Semiconductors

PMBT2369,215

NXP Semiconductors

NXP Semiconductors' PMBT2369,215 is a NPN BJT transistor for switching applications. It has a VCEsat of 0.25V, hFE of 20, and IC of 0.2A. With a max operating temperature of 150°C, it offers fast turn-on/off times (10ns/20ns) and high transition frequency (500MHz).
BC547BTF by Fairchild Semiconductor

BC547BTF

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
BC847B by Good-ark Electronics

BC847B

Good-ark Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;
2N2905A by International Devices

2N2905A

International Devices

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
BC817-40 by Panjit International

BC817-40

Panjit International

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Transistor Application: AMPLIFIER;
2N2907A by Diotec Semiconductor Ag

2N2907A

Diotec Semiconductor Ag

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; JESD-609 Code: e3;