SMBTA06U by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	SMBTA06U
Description	NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Transistor Element Material: SILICON;
Datasheet	SMBTA06U Datasheet
In Stock	198

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	100 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.5 A
Configuration:	SEPARATE, 2 ELEMENTS
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Sub-Category:	Other Transistors
Polarity or Channel Type:	NPN
Surface Mount:	YES
Minimum DC Current Gain (hFE):	100
No. of Terminals:	6
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	80 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Moisture Sensitivity Level (MSL):	1

Pricing (USD)

Qty.	Unit Price	Ext. Price
198	-	-

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

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ETHERNET TRANSCEIVER; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 24; Package Code: HVQCCN; Package Shape: SQUARE;

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TE Connectivity's 0462-201-16141 is a CRIMP terminal with MACHINED contact design. It operates b/w -55 to 125 °C, suitable for wire gauges from 20 to 16 AWG. With a rated current of 13A, it is ideal for applications requiring FEMALE ROUND PIN-SOCKET contacts.

Yageo's RC0603JR-070RL is a SMT fixed resistor with 0 ohm resistance, rated for temperatures from -55 to 155 °C. Its metal glaze/thick film technology and 0.1 W power dissipation make it ideal for jumper applications in various electronic devices.

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): .115 A;