Infineon Technologies - SN7000E6296

SN7000E6296 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number SN7000E6296
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain-Source On Resistance: 5 ohm;
Datasheet SN7000E6296 Datasheet
In Stock691
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .25 A
Surface Mount: NO
Terminal Finish: MATTE TIN
No. of Terminals: 3
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-PBCY-T3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: 5 ohm
Maximum Feedback Capacitance (Crss): 25 pF
JEDEC-95 Code: TO-92
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 60 V
Qualification: Not Qualified
Additional Features: LOGIC LEVEL COMPATIBLE
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