Infineon Technologies - SP000010272

BAT17-04E6327 by Infineon Technologies is a Schottky mixer diode with 2 elements, 0.75 pF capacitance, and 0.35 V forward voltage. It operates in the very high frequency to ultra high frequency band for applications like microwave mixing and detection. This small outline package has a max power dissipation of 0.15 W and can withstand temperatures up to 150°C.

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

BAT6302VH6327XTSA1 by Infineon Technologies is a Schottky mixer diode with 0.85 pF capacitance, suitable for microwave applications. It features a low barrier Schottky element in a small outline package, rated for 150°C operating temperature. This single-config diode has matte tin finish and can dissipate up to 0.1 W power.

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

The Panasonic DB3X313N0L is a Schottky mixer diode with 2 elements, common cathode config, and ultra high frequency band. It operates b/w -40 to 85°C, has max VF of 0.55V, and max output current of 0.13A. Ideal for microwave applications due to its small outline package style and dual terminal position.

1N5712-AZ1 by STMicroelectronics is a Schottky mixer diode with 1.2 pF capacitance, operating from -65 °C to 200°C. It is designed for very high frequency to ultra high frequency applications, featuring a glass package and isolated case connection. With a max power dissipation of 0.43 W, it is suitable for microwave circuits requiring high-frequency signal detection.

BAT1502LSE6433XTMA1 by Infineon Technologies is a single Schottky mixer diode with low barrier Schottky technology. It operates in X Band frequency range, has a max forward voltage of 0.41V, and can handle a max output current of 0.11A. This chip carrier package diode is suitable for microwave applications requiring high-speed mixing and detection capabilities at temperatures ranging from -55 to 150°C.

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

TGD0654SSMX by Texas Instruments is a Schottky mixer diode with Gallium Arsenide element material. It operates in the very high frequency to millimeter wave band, making it suitable for applications requiring high-frequency mixing and detection. This surface-mount diode has a ceramic, metal-sealed co-fired package body ideal for compact designs.

MIXER DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Diode Element Material: SILICON; Maximum Noise Figure: 6.5 dB;

MIXER DIODE; Terminal Position: UNSPECIFIED; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: SQUARE;

MIXER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

STMicroelectronics BAT29-AZ1 is a single Schottky mixer diode with 1 pF capacitance and 0.05 uA reverse current. Ideal for ultra high frequency applications, it offers a max forward voltage of 0.55 V and 30 A output current, making it suitable for microwave mixer & detector diode circuits.

MA704WK by Panasonic is a microwave mixer diode with Schottky technology. It features a common cathode configuration, 2 elements, and operates in the L band frequency. Ideal for surface mount applications requiring high-frequency mixing and detection capabilities.

STMicroelectronics' BAR11-AR1 is a single Schottky mixer diode with 1.2 pF capacitance, operating from -65 °C to 200°C. Ideal for VHF to UHF applications, it features an isolated round glass package with axial terminals.

MIXER DIODE; Terminal Position: BOTTOM; Terminal Form: THROUGH-HOLE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

MIXER DIODE; Terminal Position: END; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

MIXER DIODE; Surface Mount: YES; Maximum Noise Figure: 5.5 dB; Diode Element Material: SILICON; Maximum Operating Temperature: 150 Cel;

BA582 by NXP Semiconductors is a single Schottky mixer diode with 1.1 pF capacitance, suitable for microwave applications. It comes in a small outline package with gull wing terminals, operating up to 150°C. Ideal for surface mount designs requiring high-frequency signal mixing and detection.

MIXER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;