Infineon Technologies - SP000010891

  1. Home
  2. Infineon Technologies - SP000010891
SP000010891 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number SP000010891
Description PNP; Configuration: CURRENT MIRROR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Reference Standard: AEC-Q101;
Datasheet SP000010891 Datasheet
In Stock582
NAME DESCRIPTION
Nominal Transition Frequency (fT): 250 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: CURRENT MIRROR
Transistor Element Material: SILICON
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 420
No. of Terminals: 4
Maximum Collector-Emitter Voltage: 30 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): NOT SPECIFIED
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
582 - -

Popular Products

Category Top Products

MMBT2907AT-7-F by Diodes Incorporated

MMBT2907AT-7-F

Diodes Incorporated

MMBT2907AT-7-F by Diodes Inc. is a PNP small signal BJT transistor with a max collector-emitter voltage of 60V and a max collector current of 0.6A. It is commonly used in applications requiring high-speed switching and amplification, such as audio amplifiers and digital circuits.
BC847AE6327HTSA1 by Infineon Technologies

BC847AE6327HTSA1

Infineon Technologies

BC847AE6327HTSA1 by Infineon Technologies is a NPN BJT transistor with hFE of 110, VCE of 45V, and fT of 250MHz. Ideal for switching applications, it operates at up to 150°C and has a collector current of 0.1A.
2N2222A by STMicroelectronics

2N2222A

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .6 A;
SMBT3904DW1T1G by Onsemi

SMBT3904DW1T1G

Onsemi

SMBT3904DW1T1G by Onsemi is a NPN BJT with hFE of 100, fT of 300 MHz, and IC of 0.2 A. Ideal for small signal applications in electronics due to its surface mount capability and max operating temperature of 150°C.
MMBT2222A by Weitronic Enterprise

MMBT2222A

Weitronic Enterprise

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;
2N2219A by Raytheon Semiconductor

2N2219A

Raytheon Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
NSM4002MR6T1G by Onsemi

NSM4002MR6T1G

Onsemi

NSM4002MR6T1G by Onsemi is a NPN BJT with hFE of 100, IC of 0.5A, and fT of 100MHz. Ideal for surface mount applications in electronics requiring high-speed signal amplification up to 150°C.
BC846-B by Infineon Technologies

BC846-B

Infineon Technologies

BC846-B by Infineon Technologies is a NPN BJT transistor with 200 min hFE, suitable for amplifier applications. It has a max collector-emitter voltage of 65V and can handle up to 0.1A of collector current. With a transition frequency of 250MHz, it comes in a small outline package ideal for surface mount assembly.
2N3906 by New Jersey Semiconductor Products

2N3906

New Jersey Semiconductor Products

PNP; Configuration: SINGLE; Nominal Transition Frequency (fT): 250 MHz; No. of Elements: 1; JESD-609 Code: e0; Transistor Element Material: SILICON;
2N3906 by Minilogic Device

2N3906

Minilogic Device

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .2 A; JESD-609 Code: e0;
MMBT2222A by Secos

MMBT2222A

Secos

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;
MMBT2222A by Infineon Technologies

MMBT2222A

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .6 A;
2N3904 by Toshiba

2N3904

Toshiba

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
BC847BW,115 by Nexperia

BC847BW,115

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Minimum Operating Temperature: -65 Cel;
BC547B by National Semiconductor

BC547B

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
MMBT3904Q-7-F by Diodes Incorporated

MMBT3904Q-7-F

Diodes Incorporated

MMBT3904Q-7-F by Diodes Inc. is a NPN BJT transistor for switching applications. It has a VCEsat of 0.3V, hFE of 30, and can handle IC up to 0.2A. With a max operating temperature of 150°C, it is ideal for small outline surface mount designs requiring fast switching speeds.
BC847C by Formosa Microsemi

BC847C

Formosa Microsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Package Style (Meter): SMALL OUTLINE;
MMBT2222A by Fairchild Semiconductor

MMBT2222A

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): 1 A;
MMBT2907ALT3G by Onsemi

MMBT2907ALT3G

Onsemi

MMBT2907ALT3G by Onsemi is a PNP BJT transistor with 100 min hFE, 60V VCEO, and 200MHz fT. Ideal for switching applications, it has a small outline package and can handle up to 0.6A of collector current. The device operates at temperatures up to 150°C and features a turn-on time of 45ns.
MMBT2222A by Rectron

MMBT2222A

Rectron

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Terminal Form: GULL WING; Package Shape: RECTANGULAR;