Infineon Technologies - SP000011692

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum Operating Temperature: -55 Cel; Transistor Element Material: SILICON;

SMBTA42E6327HTSA1 by Infineon is a NPN BJT with max. VCE of 300V, IC of 0.5A, and hFE of 40. Ideal for small signal applications in electronics due to its high transition frequency of 50MHz and temp range up to 150°C. Its Gull Wing terminals make it suitable for surface mount designs.

SMMBT2907ALT3G by Onsemi is a PNP BJT with 60V VCEO, 0.6A IC, and 200MHz fT. Ideal for small outline applications requiring high DC current gain and fast turn-on/off times. Suitable for automotive electronics due to AEC-Q101 compliance and peak reflow temperature of 260°C.

SBC846BDW1T1G by Onsemi is a NPN BJT with 2 elements, ideal for amplifier applications. It has a max collector-emitter voltage of 65V, min DC current gain of 200 (hFE), and operates up to 150°C. This small outline transistor features a max power dissipation of 0.38W in a rectangular package with Gull Wing terminals.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; No. of Elements: 1;

2N2219A by Texas Instruments is a NPN BJT transistor with max. power dissipation of 0.8W, max. collector-emitter voltage of 40V, and max. collector current of 0.8A. It is commonly used for switching applications due to its fast turn on time (35ns) and high transition frequency (300MHz).

Small Signal Bipolar Transistors;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .65 W; Maximum Collector Current (IC): .8 A; No. of Terminals: 4;

Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .5 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Package Shape: ROUND;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .2 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Diodes Inc. MMBT3906-7-F is a PNP BJT transistor with 3 terminals, max power dissipation of 0.3W, and max collector-emitter voltage of 40V. Ideal for switching applications in small outline packages, it operates b/w -55 to 150°C with a transition frequency of 250MHz.

BC547C by Diotec Semiconductor Ag is a NPN small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 45V and a max collector current of 0.1A. It has a min DC current gain of 420 and can operate at temperatures up to 150°C. This transistor is commonly used in applications requiring low power dissipation and high frequency performance, such as audio amplifiers and switching circuits.

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Terminal Form: WIRE; Maximum Turn Off Time (toff): 300 ns;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;

SMMBT3906LT1G by Onsemi is a PNP BJT with VCEsat of 0.4V, hFE of 30, and IC of 0.2A. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance, 260°C peak reflow temp, and 250MHz fT.