Infineon Technologies - SP000271906

  1. Home
  2. Infineon Technologies - SP000271906
SP000271906 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number SP000271906
Description Small Signal Bipolar Transistors;
Datasheet SP000271906 Datasheet
In Stock210
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
210 - -

Popular Products

Category Top Products

MMBT3906T-7-F by Diodes Incorporated

MMBT3906T-7-F

Diodes Incorporated

Diodes Inc. MMBT3906T-7-F is a PNP BJT with VCEsat of 0.4V, hFE of 30, and fT of 250MHz. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance and max operating temp of 150°C. Features GULL WING terminals, RECTANGULAR package shape, and SILICON transistor element material.
BC817-40 by Taitron Components

BC817-40

Taitron Components

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Transistor Application: SWITCHING;
2N2222A by New England Semiconductor

2N2222A

New England Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
JANTX2N2907AUATR by Microsemi

JANTX2N2907AUATR

Microsemi

Small Signal Bipolar Transistors;
MMBT2222A by Jiangsu Changjiang Electronics Technology

MMBT2222A

Jiangsu Changjiang Electronics Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .6 A;
2N2222A by International Devices

2N2222A

International Devices

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
2N3906 by Motorola

2N3906

Motorola

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; JEDEC-95 Code: TO-92;
2N2222A by SPC TECHNOLOGY/ MULTICOMP

2N2222A

SPC TECHNOLOGY/ MULTICOMP

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
ULN2803AFWG(O,ELM) by Toshiba

ULN2803AFWG(O,ELM)

Toshiba

Toshiba's ULN2803AFWG(O,ELM) is an NPN BJT with 8 Darlington banks, built-in diode/resistor. Ideal for switching applications, it has a hFE of 1000 and can handle up to 50V/0.5A. This surface-mount transistor comes in a small outline package with Gull Wing terminals.
MMBT2222A by Nte Electronics

MMBT2222A

Nte Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; No. of Terminals: 3;
2N2907A by SPC TECHNOLOGY/ MULTICOMP

2N2907A

SPC TECHNOLOGY/ MULTICOMP

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Terminal Position: BOTTOM;
SMBT3904DW1T1G by Onsemi

SMBT3904DW1T1G

Onsemi

SMBT3904DW1T1G by Onsemi is a NPN BJT with hFE of 100, fT of 300 MHz, and IC of 0.2 A. Ideal for small signal applications in electronics due to its surface mount capability and max operating temperature of 150°C.
2N3904TFR by Fairchild Semiconductor

2N3904TFR

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
BC847BVN-7 by Diodes Incorporated

BC847BVN-7

Diodes Incorporated

BC847BVN-7 by Diodes Inc. is a small signal BJT with NPN and PNP polarity, featuring separate 2-element configuration. With a max power dissipation of 0.15W, it operates at up to 150°C and has a max collector-emitter voltage of 45V. Ideal for applications requiring high DC current gain and transition frequency up to 300MHz in compact designs.
JANTX2N2222A by Microsemi

JANTX2N2222A

Microsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; JESD-30 Code: O-MBCY-W3; JESD-609 Code: e0;
BC817-40 by Taiwan Semiconductor

BC817-40

Taiwan Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
2N3906 by Onsemi

2N3906

Onsemi

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
2N3904 by Toshiba

2N3904

Toshiba

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
BC547-C by Secos

BC547-C

Secos

Secos BC547-C is a NPN BJT with hFE of 110, VCE of 45V, and fT of 150MHz. Ideal for low-power applications in electronics due to its 0.1A IC rating and silicon transistor element material. Its through-hole package makes it suitable for various circuit configurations.
BC846B by Good-ark Electronics

BC846B

Good-ark Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;