Infineon Technologies - SP000359362

SP000359362 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number SP000359362
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Application: SWITCHING;
Datasheet SP000359362 Datasheet
In Stock838
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 10 mJ
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 8 A
Maximum Pulsed Drain Current (IDM): 80 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 8
Minimum DS Breakdown Voltage: 30 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: .022 ohm
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Pricing (USD)

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