Infineon Technologies - SP000743458

  1. Home
  2. Infineon Technologies - SP000743458
SP000743458 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number SP000743458
Description MIXER DIODE; Maximum Diode Capacitance: .35 pF; Maximum Operating Temperature: 150 Cel; Frequency Band: X BAND; Technology: SCHOTTKY; Maximum Forward Voltage (VF): .41 V;
Datasheet SP000743458 Datasheet
In Stock743
NAME DESCRIPTION
Diode Element Material: SILICON
Maximum Forward Voltage (VF): .41 V
Maximum Diode Capacitance: .35 pF
Technology: SCHOTTKY
Diode Type: MIXER DIODE
Schottky Barrier Type: LOW BARRIER
Frequency Band: X BAND
Minimum Breakdown Voltage: 4 V
Maximum Power Dissipation: .1 W
Maximum Output Current: .11 A
Maximum Operating Temperature: 150 Cel
Minimum Operating Temperature: -55 Cel
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
743 - -

Popular Products

Category Top Products

BAT14-044 by Infineon Technologies

BAT14-044

Infineon Technologies

MIXER DIODE; Terminal Position: UNSPECIFIED; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
934025520115 by NXP Semiconductors

934025520115

NXP Semiconductors

MIXER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BAT15-044H by Infineon Technologies

BAT15-044H

Infineon Technologies

MIXER DIODE; Terminal Position: UNSPECIFIED; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
MBD301 by Onsemi

MBD301

Onsemi

Onsemi's MBD301 is a single microwave mixer diode with 1.5 pF capacitance, operating up to 125°C. Ideal for VHF to UHF applications, it features Schottky technology and can handle up to 0.28 W power dissipation in a cylindrical package.
NSR15SDW1T2 by Onsemi

NSR15SDW1T2

Onsemi

NSR15SDW1T2 by Onsemi is a Schottky mixer diode with 2 elements, max. reverse voltage of 15V, and VF of 0.415V. It operates b/w -65 to 150 °C and has a peak reflow temp of 235 °C. Ideal for microwave applications due to its low capacitance and high reverse current resistance.
HSMS-282K-TR1 by Hewlett Packard

HSMS-282K-TR1

Hewlett Packard

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 6; Surface Mount: YES; Package Shape: RECTANGULAR;
HSMS-2852-TR2G by Agilent Technologies

HSMS-2852-TR2G

Agilent Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
HSMS-285B-TR1G by Broadcom

HSMS-285B-TR1G

Broadcom

HSMS-285B-TR1G by Broadcom is a Schottky mixer diode with a frequency range of 0.915 GHz to 4 GHz. It features a zero barrier Schottky element and operates at temperatures up to 150°C. This single-config diode in a small outline package is ideal for microwave applications in the L band.
HSMS-2822-BLKG by Agilent Technologies

HSMS-2822-BLKG

Agilent Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
BAT15-025S by Infineon Technologies

BAT15-025S

Infineon Technologies

MIXER DIODE; Terminal Position: UNSPECIFIED; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: SQUARE;
BAT15-099LRH-E6327 by Infineon Technologies

BAT15-099LRH-E6327

Infineon Technologies

MIXER DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1; Schottky Barrier Type: LOW BARRIER; No. of Elements: 2;
PMBD352212 by NXP Semiconductors

PMBD352212

NXP Semiconductors

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
5082-2835 by Agilent Technologies

5082-2835

Agilent Technologies

MIXER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
BAT15-104 by Infineon Technologies

BAT15-104

Infineon Technologies

MIXER DIODE; Terminal Position: UNSPECIFIED; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
DB3X317K0L by Panasonic

DB3X317K0L

Panasonic

The Panasonic DB3X317K0L is a high-frequency mixer diode with Schottky technology. It operates up to 85 GHz, has a max forward voltage of 0.52 V, and can handle an output current of 1 A. Ideal for microwave applications requiring high-frequency signal mixing and detection in compact electronic devices.
DAN222M3T5G by Onsemi

DAN222M3T5G

Onsemi

DAN222M3T5G by Onsemi is a microwave mixer & detector diode with common cathode, 2 elements config. It has a max diode capacitance of 3.5 pF and operates at up to 150°C. Ideal for applications requiring small outline package style and high-speed performance in RF circuits.
HSMS-2855-TR1G by Broadcom

HSMS-2855-TR1G

Broadcom

Broadcom's HSMS-2855-TR1G is a Schottky mixer diode with 2 elements, operating from 0.915 GHz to 4 GHz in L Band. It features a small outline package with separate configuration and Gull Wing terminals. Ideal for microwave applications requiring high-frequency mixing and detection capabilities.
BAT15-124S by Infineon Technologies

BAT15-124S

Infineon Technologies

MIXER DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Maximum Noise Figure: 9 dB; Diode Element Material: SILICON;
BA423A116 by NXP Semiconductors

BA423A116

NXP Semiconductors

MIXER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
1PS76SB17135 by NXP Semiconductors

1PS76SB17135

NXP Semiconductors

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;