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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | SP000843678 |
| Description | N-Channel; Maximum Power Dissipation (Abs): 600 W; Maximum VCEsat: 1.95 V; Transistor Element Material: SILICON; Maximum Gate-Emitter Voltage: 20 V; Minimum Operating Temperature: -40 Cel; |
| Datasheet | SP000843678 Datasheet |
| In Stock | 527 |
| NAME | DESCRIPTION |
|---|---|
| Nominal Turn Off Time (toff): | 450 ns |
| Maximum Power Dissipation (Abs): | 600 W |
| Maximum Collector-Emitter Voltage: | 650 V |
| Nominal Turn On Time (ton): | 210 ns |
| Transistor Element Material: | SILICON |
| Maximum Gate-Emitter Threshold Voltage: | 6.5 V |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Gate-Emitter Voltage: | 20 V |
| Case Connection: | ISOLATED |
| Polarity or Channel Type: | N-Channel |
| Maximum VCEsat: | 1.95 V |
| Minimum Operating Temperature: | -40 Cel |








