Infineon Technologies - SP001563432

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SP001563432 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number SP001563432
Description Small Signal Field-Effect Transistors;
Datasheet SP001563432 Datasheet
In Stock267
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BSS84 by Nexperia

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P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Minimum DS Breakdown Voltage: 50 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
FDC6561AN by Fairchild Semiconductor

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2N7002PV,115 by Nexperia

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N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain-Source On Resistance: 1.6 ohm;
NDS351AN by National Semiconductor

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BSS84 by Diodes Incorporated

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P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Moisture Sensitivity Level (MSL): 1; Package Shape: RECTANGULAR;
BSL308PEH6327XTSA1 by Infineon Technologies

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BSL308PEH6327XTSA1 by Infineon Technologies is a P-CHANNEL FET with 30V DS Breakdown Voltage. It features 2 elements with built-in diode, GULL WING terminals, and operates in ENHANCEMENT MODE. Ideal for applications requiring high drain current up to 2A, low on-resistance of 0.08 ohm, and AEC-Q101 compliance.
SI2315BDS-T1-E3 by Vishay Intertechnology

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Vishay Intertechnology's SI2315BDS-T1-E3 is a P-CHANNEL FET with 12V DS Breakdown Voltage, 2.8A Drain Current, and 0.05 ohm On Resistance. Ideal for small signal applications in electronics due to its compact SMALL OUTLINE package and -55 to 150 °C operating temperature range.
BSS83PL6327XT by Infineon Technologies

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BSS83PL6327XT by Infineon Technologies is a P-CHANNEL FET with 60V DS breakdown voltage and 0.33A max drain current. It is used in enhancement mode applications, featuring a built-in diode and 2 ohm max on resistance for efficient performance in small outline packages.
BS170/D75Z by National Semiconductor

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2N7002W by Yangzhou Yangjie Electronics

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FDV304P by Onsemi

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The Onsemi FDV304P is a P-CHANNEL FET with 25V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 0.46A and an Operating Temperature range of -55 to 150 °C. The transistor comes in a PLASTIC/EPOXY package with GULL WING terminals, suitable for surface mount configurations.
2N7002K by Onsemi

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SI9926CDY-T1-GE3 by Vishay Intertechnology

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Vishay Intertechnology's SI9926CDY-T1-GE3 is a N-channel FET with 2 elements and built-in diode, ideal for switching applications. Features include 20V DS breakdown voltage, 8A max drain current, and 0.018 ohm max drain-source resistance. With a small outline package style and operating up to 150°C, it suits various electronic designs.
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LBSS84LT1G by Leshan Radio is a P-CHANNEL small signal FET with a min DS breakdown voltage of 50V. It is used for switching applications and operates in enhancement mode. This surface mount transistor has a max drain current of 0.13A and a max power dissipation of 0.225W.
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