Infineon Technologies - SPA08N80C3

SPA08N80C3 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number SPA08N80C3
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 40 W; Maximum Drain-Source On Resistance: .65 ohm; No. of Terminals: 3;
Datasheet SPA08N80C3 Datasheet
In Stock778
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 10
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 8 A
Maximum Pulsed Drain Current (IDM): 24 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
Terminal Finish: TIN
No. of Terminals: 3
Maximum Power Dissipation (Abs): 40 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: .65 ohm
Avalanche Energy Rating (EAS): 340 mJ
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 800 V
Qualification: Not Qualified
Additional Features: AVALANCHE RATED, HIGH VOLTAGE
Maximum Drain Current (Abs) (ID): 4.9 A
Peak Reflow Temperature (C): 260
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
778 $2.390 $1,859.420

Popular Products

Category Top Products